JPS6283393A - 単結晶引上装置 - Google Patents

単結晶引上装置

Info

Publication number
JPS6283393A
JPS6283393A JP22407085A JP22407085A JPS6283393A JP S6283393 A JPS6283393 A JP S6283393A JP 22407085 A JP22407085 A JP 22407085A JP 22407085 A JP22407085 A JP 22407085A JP S6283393 A JPS6283393 A JP S6283393A
Authority
JP
Japan
Prior art keywords
single crystal
radiation thermometer
molten metal
pulling
fusion ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22407085A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04957B2 (enExample
Inventor
Yukichi Horioka
佑吉 堀岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SILICON KK
Mitsubishi Metal Corp
Original Assignee
NIPPON SILICON KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SILICON KK, Mitsubishi Metal Corp filed Critical NIPPON SILICON KK
Priority to JP22407085A priority Critical patent/JPS6283393A/ja
Publication of JPS6283393A publication Critical patent/JPS6283393A/ja
Publication of JPH04957B2 publication Critical patent/JPH04957B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP22407085A 1985-10-08 1985-10-08 単結晶引上装置 Granted JPS6283393A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22407085A JPS6283393A (ja) 1985-10-08 1985-10-08 単結晶引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22407085A JPS6283393A (ja) 1985-10-08 1985-10-08 単結晶引上装置

Publications (2)

Publication Number Publication Date
JPS6283393A true JPS6283393A (ja) 1987-04-16
JPH04957B2 JPH04957B2 (enExample) 1992-01-09

Family

ID=16808091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22407085A Granted JPS6283393A (ja) 1985-10-08 1985-10-08 単結晶引上装置

Country Status (1)

Country Link
JP (1) JPS6283393A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018150219A (ja) * 2017-03-13 2018-09-27 Ftb研究所株式会社 大口径cz単結晶の成長装置およびその成長方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130895A (en) * 1979-03-28 1980-10-11 Hitachi Ltd Single crystal preparing method and apparatus therefor
JPS5933555A (ja) * 1982-08-18 1984-02-23 Oki Electric Ind Co Ltd デ−タフロ−制御方式

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130895A (en) * 1979-03-28 1980-10-11 Hitachi Ltd Single crystal preparing method and apparatus therefor
JPS5933555A (ja) * 1982-08-18 1984-02-23 Oki Electric Ind Co Ltd デ−タフロ−制御方式

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018150219A (ja) * 2017-03-13 2018-09-27 Ftb研究所株式会社 大口径cz単結晶の成長装置およびその成長方法

Also Published As

Publication number Publication date
JPH04957B2 (enExample) 1992-01-09

Similar Documents

Publication Publication Date Title
US6241818B1 (en) Method and system of controlling taper growth in a semiconductor crystal growth process
EP0265805B1 (en) Apparatus for measuring crystal diameter
US5183528A (en) Method of automatic control of growing neck portion of a single crystal by the cz method
EP0429839B1 (en) Silicon single crystal growth control apparatus and method forming and using a temperature pattern of heater
US4710258A (en) System for controlling the diameter of a crystal in a crystal growing furnace
EP0183221A2 (en) Improvements in or relating to the controlled growth of a crystal
JPS6283393A (ja) 単結晶引上装置
JPS6287481A (ja) 単結晶引上装置における溶湯初期位置設定方法
GB1570590A (en) Zone refining
JP2003176199A (ja) 単結晶引上げ装置および引上げ方法
JP3592909B2 (ja) 単結晶引上装置
JPS6287482A (ja) 単結晶製造装置
JPS6296389A (ja) 単結晶製造装置
JP2002087899A (ja) リボン結晶の成長方法及び装置
JPH07277879A (ja) Cz法による単結晶製造装置および融液レベル制御方法
JPH0377157B2 (enExample)
JPS61122187A (ja) 単結晶引上機
JPS62138387A (ja) 引上結晶の直径測定装置
SU1533371A1 (ru) Способ контрол процесса кристаллизации из расплава
JPH0234533A (ja) ガラス線の製造装置
JPH05213688A (ja) 単結晶製造装置の制御装置
JP2018115102A (ja) 単結晶製造方法及び単結晶製造装置
JPS6283394A (ja) 単結晶引上装置の直径制御方法
JPH0538060Y2 (enExample)
JPS62105994A (ja) 引上単結晶のボトム形状制御方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term