JPH04957B2 - - Google Patents
Info
- Publication number
- JPH04957B2 JPH04957B2 JP60224070A JP22407085A JPH04957B2 JP H04957 B2 JPH04957 B2 JP H04957B2 JP 60224070 A JP60224070 A JP 60224070A JP 22407085 A JP22407085 A JP 22407085A JP H04957 B2 JPH04957 B2 JP H04957B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- radiation thermometer
- molten metal
- fusion ring
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22407085A JPS6283393A (ja) | 1985-10-08 | 1985-10-08 | 単結晶引上装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22407085A JPS6283393A (ja) | 1985-10-08 | 1985-10-08 | 単結晶引上装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6283393A JPS6283393A (ja) | 1987-04-16 |
| JPH04957B2 true JPH04957B2 (enExample) | 1992-01-09 |
Family
ID=16808091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22407085A Granted JPS6283393A (ja) | 1985-10-08 | 1985-10-08 | 単結晶引上装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6283393A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6452098B2 (ja) * | 2017-03-13 | 2019-01-16 | Ftb研究所株式会社 | 大口径cz単結晶の成長装置およびその成長方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55130895A (en) * | 1979-03-28 | 1980-10-11 | Hitachi Ltd | Single crystal preparing method and apparatus therefor |
| JPS5933555A (ja) * | 1982-08-18 | 1984-02-23 | Oki Electric Ind Co Ltd | デ−タフロ−制御方式 |
-
1985
- 1985-10-08 JP JP22407085A patent/JPS6283393A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6283393A (ja) | 1987-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0265805B1 (en) | Apparatus for measuring crystal diameter | |
| US5183528A (en) | Method of automatic control of growing neck portion of a single crystal by the cz method | |
| EP1169497B1 (en) | Method and system of controlling taper growth in a semiconductor crystal growth process | |
| US4710258A (en) | System for controlling the diameter of a crystal in a crystal growing furnace | |
| EP0183221A2 (en) | Improvements in or relating to the controlled growth of a crystal | |
| JPH04957B2 (enExample) | ||
| JPS6287481A (ja) | 単結晶引上装置における溶湯初期位置設定方法 | |
| JPH07133186A (ja) | シリコン単結晶の製造装置および製造方法 | |
| JP2003176199A (ja) | 単結晶引上げ装置および引上げ方法 | |
| GB1570590A (en) | Zone refining | |
| JP2627696B2 (ja) | Cz法における融液レベル制御装置および制御方法 | |
| JPH11130585A (ja) | 単結晶引上装置 | |
| JPH0331674B2 (enExample) | ||
| JPH07277879A (ja) | Cz法による単結晶製造装置および融液レベル制御方法 | |
| JPH0377157B2 (enExample) | ||
| JPS6287482A (ja) | 単結晶製造装置 | |
| JPS61122187A (ja) | 単結晶引上機 | |
| JPH0234533A (ja) | ガラス線の製造装置 | |
| JPS62138387A (ja) | 引上結晶の直径測定装置 | |
| JPS62105994A (ja) | 引上単結晶のボトム形状制御方法 | |
| SU1533371A1 (ru) | Способ контрол процесса кристаллизации из расплава | |
| JP2018115102A (ja) | 単結晶製造方法及び単結晶製造装置 | |
| JPH0538060Y2 (enExample) | ||
| JPH01317191A (ja) | 単結晶引上装置における直径測定装置 | |
| JPS6283394A (ja) | 単結晶引上装置の直径制御方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |