JPS6280351U - - Google Patents
Info
- Publication number
- JPS6280351U JPS6280351U JP17287685U JP17287685U JPS6280351U JP S6280351 U JPS6280351 U JP S6280351U JP 17287685 U JP17287685 U JP 17287685U JP 17287685 U JP17287685 U JP 17287685U JP S6280351 U JPS6280351 U JP S6280351U
- Authority
- JP
- Japan
- Prior art keywords
- trench
- insulator
- lie
- drain region
- wall surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図ａ〜ｇは本考案の一実施例のＭＯＳＦＥ
Ｔトランジスタの製造工程を示す図、第２図は本
実施例のＭＯＳＦＥＴトランジスタの平面図、第
３図は従来のＭＯＳＦＥＴトランジスタの構造を
示す図である。
１１……半導体基板、１２……単結晶層、１４
……溝、１５……ソース領域、１６……ドレイン
領域、１７……酸化膜、１８……ポリシリコン、
１９……層間絶縁膜、２０〜２２……電極。
Figures 1a to 1g show a MOSFE according to an embodiment of the present invention.
2 is a plan view of the MOSFET transistor of this embodiment, and FIG. 3 is a diagram showing the structure of a conventional MOSFET transistor. 11... Semiconductor substrate, 12... Single crystal layer, 14
... Groove, 15 ... Source region, 16 ... Drain region, 17 ... Oxide film, 18 ... Polysilicon,
19... Interlayer insulating film, 20-22... Electrode.
Claims (1)
に溝を形成し、該溝の開口部から底に至る内壁面
に絶縁物を形成し、該絶縁物の外側にゲート電圧
印加部を設けたことを特徴とするＭＯＳトランジ
スタ。 A trench is formed to lie between the source region and the drain region, an insulator is formed on the inner wall surface from the opening to the bottom of the trench, and a gate voltage application section is provided outside the insulator. MOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17287685U JPS6280351U (en) | 1985-11-09 | 1985-11-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17287685U JPS6280351U (en) | 1985-11-09 | 1985-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6280351U true JPS6280351U (en) | 1987-05-22 |
Family
ID=31109814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17287685U Pending JPS6280351U (en) | 1985-11-09 | 1985-11-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6280351U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115183A (en) * | 1977-03-18 | 1978-10-07 | Toshiba Corp | Production of semiconductor device |
| JPS53130986A (en) * | 1977-04-20 | 1978-11-15 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
| JPS5485686A (en) * | 1977-12-20 | 1979-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
-
1985
- 1985-11-09 JP JP17287685U patent/JPS6280351U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115183A (en) * | 1977-03-18 | 1978-10-07 | Toshiba Corp | Production of semiconductor device |
| JPS53130986A (en) * | 1977-04-20 | 1978-11-15 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
| JPS5485686A (en) * | 1977-12-20 | 1979-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
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