JPS628029B2 - - Google Patents

Info

Publication number
JPS628029B2
JPS628029B2 JP55156144A JP15614480A JPS628029B2 JP S628029 B2 JPS628029 B2 JP S628029B2 JP 55156144 A JP55156144 A JP 55156144A JP 15614480 A JP15614480 A JP 15614480A JP S628029 B2 JPS628029 B2 JP S628029B2
Authority
JP
Japan
Prior art keywords
oxide film
oxidation
material layer
semiconductor device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55156144A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5779641A (en
Inventor
Hisahiro Matsukawa
Hiroshi Nozawa
Junichi Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55156144A priority Critical patent/JPS5779641A/ja
Publication of JPS5779641A publication Critical patent/JPS5779641A/ja
Publication of JPS628029B2 publication Critical patent/JPS628029B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/012—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP55156144A 1980-11-06 1980-11-06 Manufacture of semiconductor device Granted JPS5779641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156144A JPS5779641A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156144A JPS5779641A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5779641A JPS5779641A (en) 1982-05-18
JPS628029B2 true JPS628029B2 (index.php) 1987-02-20

Family

ID=15621283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156144A Granted JPS5779641A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5779641A (index.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
JP3298780B2 (ja) * 1995-08-30 2002-07-08 アルプス電気株式会社 サーマルヘッドおよびサーマルヘッドの製造方法

Also Published As

Publication number Publication date
JPS5779641A (en) 1982-05-18

Similar Documents

Publication Publication Date Title
EP0138978B1 (en) Method of manufacturing a semiconductor device having small dimensions
US4459325A (en) Semiconductor device and method for manufacturing the same
JP2558931B2 (ja) 半導体装置およびその製造方法
US4178191A (en) Process of making a planar MOS silicon-on-insulating substrate device
JPS622465B2 (index.php)
JPH1022397A (ja) 半導体装置の製造方法
US4560421A (en) Semiconductor device and method of manufacturing the same
JPH0775243B2 (ja) 半導体装置の製造方法
JPH06163532A (ja) 半導体素子分離方法
JPH0312785B2 (index.php)
JPH0628282B2 (ja) 半導体装置の製造方法
US4755863A (en) Semiconductor device having a semiconductor substrate with a high impurity concentration
JPH0763072B2 (ja) 半導体デバイスの分離方法
JPS628029B2 (index.php)
US5763316A (en) Substrate isolation process to minimize junction leakage
JPS628028B2 (index.php)
JPH0648690B2 (ja) 半導体装置の製造方法
JP2995931B2 (ja) 半導体装置の製造方法
JPS5856436A (ja) 半導体装置の製造方法
JPS628027B2 (index.php)
JPH023306B2 (index.php)
JPS58200554A (ja) 半導体装置の製造方法
JP2517906B2 (ja) 半導体装置の製造方法
JPS5837990B2 (ja) 半導体装置の製造方法
JPS628026B2 (index.php)