JPS628015B2 - - Google Patents

Info

Publication number
JPS628015B2
JPS628015B2 JP55100786A JP10078680A JPS628015B2 JP S628015 B2 JPS628015 B2 JP S628015B2 JP 55100786 A JP55100786 A JP 55100786A JP 10078680 A JP10078680 A JP 10078680A JP S628015 B2 JPS628015 B2 JP S628015B2
Authority
JP
Japan
Prior art keywords
pattern
patterns
scattering intensity
intensity distribution
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55100786A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5726436A (en
Inventor
Noriaki Nakayama
Yasuhide Machida
Norishige Hisatsugu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10078680A priority Critical patent/JPS5726436A/ja
Publication of JPS5726436A publication Critical patent/JPS5726436A/ja
Publication of JPS628015B2 publication Critical patent/JPS628015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP10078680A 1980-07-23 1980-07-23 Extraction pattern for electron scattering intensity distribution Granted JPS5726436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10078680A JPS5726436A (en) 1980-07-23 1980-07-23 Extraction pattern for electron scattering intensity distribution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10078680A JPS5726436A (en) 1980-07-23 1980-07-23 Extraction pattern for electron scattering intensity distribution

Publications (2)

Publication Number Publication Date
JPS5726436A JPS5726436A (en) 1982-02-12
JPS628015B2 true JPS628015B2 (enExample) 1987-02-20

Family

ID=14283130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10078680A Granted JPS5726436A (en) 1980-07-23 1980-07-23 Extraction pattern for electron scattering intensity distribution

Country Status (1)

Country Link
JP (1) JPS5726436A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210616A (ja) * 1982-05-31 1983-12-07 Toshiba Corp 電子ビ−ム描画方法
JPS58210617A (ja) * 1982-05-31 1983-12-07 Toshiba Corp 電子ビ−ム描画方法

Also Published As

Publication number Publication date
JPS5726436A (en) 1982-02-12

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