JPS6277454A - 立方晶窒化ホウ素膜の形成方法 - Google Patents
立方晶窒化ホウ素膜の形成方法Info
- Publication number
- JPS6277454A JPS6277454A JP21518685A JP21518685A JPS6277454A JP S6277454 A JPS6277454 A JP S6277454A JP 21518685 A JP21518685 A JP 21518685A JP 21518685 A JP21518685 A JP 21518685A JP S6277454 A JPS6277454 A JP S6277454A
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- substrate
- cubic boron
- nozzle
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052582 BN Inorganic materials 0.000 title claims description 29
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims description 29
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 239000007789 gas Substances 0.000 claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 230000004913 activation Effects 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052754 neon Inorganic materials 0.000 claims description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- -1 hydrogen nitride compound Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 13
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 230000003213 activating effect Effects 0.000 abstract 3
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 239000013078 crystal Substances 0.000 description 13
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010017577 Gait disturbance Diseases 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21518685A JPS6277454A (ja) | 1985-09-30 | 1985-09-30 | 立方晶窒化ホウ素膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21518685A JPS6277454A (ja) | 1985-09-30 | 1985-09-30 | 立方晶窒化ホウ素膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6277454A true JPS6277454A (ja) | 1987-04-09 |
| JPH0568541B2 JPH0568541B2 (enrdf_load_stackoverflow) | 1993-09-29 |
Family
ID=16668096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21518685A Granted JPS6277454A (ja) | 1985-09-30 | 1985-09-30 | 立方晶窒化ホウ素膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6277454A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246357A (ja) * | 1988-03-28 | 1989-10-02 | Mitsubishi Heavy Ind Ltd | 立方晶窒化ホウ素膜の製造方法 |
| US4941430A (en) * | 1987-05-01 | 1990-07-17 | Nihon Sinku Gijutsu Kabusiki Kaisha | Apparatus for forming reactive deposition film |
| JPH02259059A (ja) * | 1989-03-31 | 1990-10-19 | Mitsubishi Heavy Ind Ltd | 窒化ホウ素の形成方法 |
| US5227318A (en) * | 1989-12-06 | 1993-07-13 | General Motors Corporation | Method of making a cubic boron nitride bipolar transistor |
| US5232862A (en) * | 1990-07-16 | 1993-08-03 | General Motors Corporation | Method of fabricating a transistor having a cubic boron nitride layer |
| US5264296A (en) * | 1989-12-06 | 1993-11-23 | General Motors Corporation | Laser depositon of crystalline boron nitride films |
| US5330611A (en) * | 1989-12-06 | 1994-07-19 | General Motors Corporation | Cubic boron nitride carbide films |
| US5725674A (en) * | 1991-03-18 | 1998-03-10 | Trustees Of Boston University | Device and method for epitaxially growing gallium nitride layers |
-
1985
- 1985-09-30 JP JP21518685A patent/JPS6277454A/ja active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941430A (en) * | 1987-05-01 | 1990-07-17 | Nihon Sinku Gijutsu Kabusiki Kaisha | Apparatus for forming reactive deposition film |
| JPH01246357A (ja) * | 1988-03-28 | 1989-10-02 | Mitsubishi Heavy Ind Ltd | 立方晶窒化ホウ素膜の製造方法 |
| JPH02259059A (ja) * | 1989-03-31 | 1990-10-19 | Mitsubishi Heavy Ind Ltd | 窒化ホウ素の形成方法 |
| US5227318A (en) * | 1989-12-06 | 1993-07-13 | General Motors Corporation | Method of making a cubic boron nitride bipolar transistor |
| US5264296A (en) * | 1989-12-06 | 1993-11-23 | General Motors Corporation | Laser depositon of crystalline boron nitride films |
| US5279869A (en) * | 1989-12-06 | 1994-01-18 | General Motors Corporation | Laser deposition of cubic boron nitride films |
| US5330611A (en) * | 1989-12-06 | 1994-07-19 | General Motors Corporation | Cubic boron nitride carbide films |
| US5232862A (en) * | 1990-07-16 | 1993-08-03 | General Motors Corporation | Method of fabricating a transistor having a cubic boron nitride layer |
| US5725674A (en) * | 1991-03-18 | 1998-03-10 | Trustees Of Boston University | Device and method for epitaxially growing gallium nitride layers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0568541B2 (enrdf_load_stackoverflow) | 1993-09-29 |
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