JPS6276545A - 表示装置用駆動回路基板 - Google Patents

表示装置用駆動回路基板

Info

Publication number
JPS6276545A
JPS6276545A JP60214570A JP21457085A JPS6276545A JP S6276545 A JPS6276545 A JP S6276545A JP 60214570 A JP60214570 A JP 60214570A JP 21457085 A JP21457085 A JP 21457085A JP S6276545 A JPS6276545 A JP S6276545A
Authority
JP
Japan
Prior art keywords
film
address
display device
line
drive circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60214570A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0340511B2 (enExample
Inventor
Mitsushi Ikeda
光志 池田
Toshio Aoki
寿男 青木
Masayuki Dojiro
堂城　政幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60214570A priority Critical patent/JPS6276545A/ja
Publication of JPS6276545A publication Critical patent/JPS6276545A/ja
Publication of JPH0340511B2 publication Critical patent/JPH0340511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP60214570A 1985-09-30 1985-09-30 表示装置用駆動回路基板 Granted JPS6276545A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60214570A JPS6276545A (ja) 1985-09-30 1985-09-30 表示装置用駆動回路基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60214570A JPS6276545A (ja) 1985-09-30 1985-09-30 表示装置用駆動回路基板

Publications (2)

Publication Number Publication Date
JPS6276545A true JPS6276545A (ja) 1987-04-08
JPH0340511B2 JPH0340511B2 (enExample) 1991-06-19

Family

ID=16657900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60214570A Granted JPS6276545A (ja) 1985-09-30 1985-09-30 表示装置用駆動回路基板

Country Status (1)

Country Link
JP (1) JPS6276545A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02216129A (ja) * 1989-02-17 1990-08-29 Matsushita Electric Ind Co Ltd 液晶画像表示装置およびその製造方法
US5146301A (en) * 1987-10-15 1992-09-08 Sharp Kabushiki Kaisha Terminal electrode structure of a liquid crystal panel display
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6839098B2 (en) * 1987-06-10 2005-01-04 Hitachi, Ltd. TFT active matrix liquid crystal display devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6839098B2 (en) * 1987-06-10 2005-01-04 Hitachi, Ltd. TFT active matrix liquid crystal display devices
US6992744B2 (en) 1987-06-10 2006-01-31 Hitachi, Ltd. TFT active matrix liquid crystal display devices
US7196762B2 (en) 1987-06-10 2007-03-27 Hitachi, Ltd. TFT active matrix liquid crystal display devices
US7450210B2 (en) 1987-06-10 2008-11-11 Hitachi, Ltd. TFT active matrix liquid crystal display devices
US5146301A (en) * 1987-10-15 1992-09-08 Sharp Kabushiki Kaisha Terminal electrode structure of a liquid crystal panel display
JPH02216129A (ja) * 1989-02-17 1990-08-29 Matsushita Electric Ind Co Ltd 液晶画像表示装置およびその製造方法
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5849611A (en) * 1992-02-05 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming a taper shaped contact hole by oxidizing a wiring
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor

Also Published As

Publication number Publication date
JPH0340511B2 (enExample) 1991-06-19

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term