JPS626647B2 - - Google Patents
Info
- Publication number
- JPS626647B2 JPS626647B2 JP11826179A JP11826179A JPS626647B2 JP S626647 B2 JPS626647 B2 JP S626647B2 JP 11826179 A JP11826179 A JP 11826179A JP 11826179 A JP11826179 A JP 11826179A JP S626647 B2 JPS626647 B2 JP S626647B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- film
- diffusion source
- semiconductor substrate
- nitride chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11826179A JPS5642336A (en) | 1979-09-14 | 1979-09-14 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11826179A JPS5642336A (en) | 1979-09-14 | 1979-09-14 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5642336A JPS5642336A (en) | 1981-04-20 |
| JPS626647B2 true JPS626647B2 (enrdf_load_stackoverflow) | 1987-02-12 |
Family
ID=14732240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11826179A Granted JPS5642336A (en) | 1979-09-14 | 1979-09-14 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5642336A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021321A (ja) * | 1983-07-12 | 1985-02-02 | Toray Eng Co Ltd | 流動層炉による金属物の加熱又は冷却方法 |
| JPS60138974A (ja) * | 1983-12-27 | 1985-07-23 | Fuji Electric Corp Res & Dev Ltd | 絶縁ゲ−ト型電界効果トランジスタの製造方法 |
| JPS629627A (ja) * | 1985-07-06 | 1987-01-17 | Sony Corp | 半導体装置の製造方法 |
| JPH0797565B2 (ja) * | 1985-07-12 | 1995-10-18 | ソニー株式会社 | 半導体装置の製造方法 |
-
1979
- 1979-09-14 JP JP11826179A patent/JPS5642336A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5642336A (en) | 1981-04-20 |
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