JPS626642B2 - - Google Patents
Info
- Publication number
- JPS626642B2 JPS626642B2 JP52133693A JP13369377A JPS626642B2 JP S626642 B2 JPS626642 B2 JP S626642B2 JP 52133693 A JP52133693 A JP 52133693A JP 13369377 A JP13369377 A JP 13369377A JP S626642 B2 JPS626642 B2 JP S626642B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- silicon epitaxial
- sapphire substrate
- silicon
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13369377A JPS5466767A (en) | 1977-11-08 | 1977-11-08 | Manufacture for sos construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13369377A JPS5466767A (en) | 1977-11-08 | 1977-11-08 | Manufacture for sos construction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5466767A JPS5466767A (en) | 1979-05-29 |
| JPS626642B2 true JPS626642B2 (enExample) | 1987-02-12 |
Family
ID=15110659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13369377A Granted JPS5466767A (en) | 1977-11-08 | 1977-11-08 | Manufacture for sos construction |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5466767A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6376872A (ja) * | 1986-09-18 | 1988-04-07 | Agency Of Ind Science & Technol | 膜の内部圧縮応力低減方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
| DE2344320C2 (de) * | 1973-09-03 | 1975-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Kompensation von Grenzflächenladungen bei epitaktisch auf ein Substrat aufgewachsenen Siliziumdünnschichten |
| JPS518869A (ja) * | 1974-07-09 | 1976-01-24 | Mitsubishi Electric Corp | Handotaiepitakisharuehano seizohoho |
-
1977
- 1977-11-08 JP JP13369377A patent/JPS5466767A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5466767A (en) | 1979-05-29 |
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