JPS626639B2 - - Google Patents

Info

Publication number
JPS626639B2
JPS626639B2 JP57202899A JP20289982A JPS626639B2 JP S626639 B2 JPS626639 B2 JP S626639B2 JP 57202899 A JP57202899 A JP 57202899A JP 20289982 A JP20289982 A JP 20289982A JP S626639 B2 JPS626639 B2 JP S626639B2
Authority
JP
Japan
Prior art keywords
target
sputtering
holder
hollow
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57202899A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5993878A (ja
Inventor
Hiroshi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
Original Assignee
Dowa Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Mining Co Ltd filed Critical Dowa Mining Co Ltd
Priority to JP20289982A priority Critical patent/JPS5993878A/ja
Publication of JPS5993878A publication Critical patent/JPS5993878A/ja
Publication of JPS626639B2 publication Critical patent/JPS626639B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP20289982A 1982-11-20 1982-11-20 スパツタ装置 Granted JPS5993878A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20289982A JPS5993878A (ja) 1982-11-20 1982-11-20 スパツタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20289982A JPS5993878A (ja) 1982-11-20 1982-11-20 スパツタ装置

Publications (2)

Publication Number Publication Date
JPS5993878A JPS5993878A (ja) 1984-05-30
JPS626639B2 true JPS626639B2 (enrdf_load_stackoverflow) 1987-02-12

Family

ID=16465037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20289982A Granted JPS5993878A (ja) 1982-11-20 1982-11-20 スパツタ装置

Country Status (1)

Country Link
JP (1) JPS5993878A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0676658B2 (ja) * 1984-06-30 1994-09-28 株式会社島津製作所 スパツタリング装置
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target

Also Published As

Publication number Publication date
JPS5993878A (ja) 1984-05-30

Similar Documents

Publication Publication Date Title
US5022977A (en) Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus
KR890004880B1 (ko) 스퍼터링 방법 및 장치
EP0328033B1 (en) Thin film forming apparatus and ion source utilizing plasma sputtering
US4151325A (en) Titanium nitride thin films for minimizing multipactoring
US5457298A (en) Coldwall hollow-cathode plasma device for support of gas discharges
JP2002173768A (ja) プラズマ密度改良のための埋込み式プラズマ源
JPH07188917A (ja) コリメーション装置
US6761804B2 (en) Inverted magnetron
EP0523695B1 (en) A sputtering apparatus and an ion source
US4395323A (en) Apparatus for improving a sputtering process
US3494852A (en) Collimated duoplasmatron-powered deposition apparatus
US7038389B2 (en) Magnetron plasma source
US4703180A (en) Microwave discharge type ion source for ion injection devices
JPH0641739A (ja) 高真空・高速イオン処理装置
JP4078084B2 (ja) イオン化成膜方法及び装置
JPH04235276A (ja) 基板をコーティングするための装置
JP2849771B2 (ja) スパッタ型イオン源
JPS626639B2 (enrdf_load_stackoverflow)
JP2552701B2 (ja) イオン源
JP3685670B2 (ja) Ｄｃスパッタリング装置
JP2000156374A (ja) スパッタ処理応用のプラズマ処理装置
JP3406769B2 (ja) イオンプレーティング装置
JP3562595B2 (ja) スパッタ装置
JP2566602B2 (ja) イオン源
JPH089780B2 (ja) 薄膜形成装置