JPS5993878A - スパツタ装置 - Google Patents
スパツタ装置Info
- Publication number
- JPS5993878A JPS5993878A JP20289982A JP20289982A JPS5993878A JP S5993878 A JPS5993878 A JP S5993878A JP 20289982 A JP20289982 A JP 20289982A JP 20289982 A JP20289982 A JP 20289982A JP S5993878 A JPS5993878 A JP S5993878A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- holder
- shaped
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20289982A JPS5993878A (ja) | 1982-11-20 | 1982-11-20 | スパツタ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20289982A JPS5993878A (ja) | 1982-11-20 | 1982-11-20 | スパツタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5993878A true JPS5993878A (ja) | 1984-05-30 |
JPS626639B2 JPS626639B2 (enrdf_load_stackoverflow) | 1987-02-12 |
Family
ID=16465037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20289982A Granted JPS5993878A (ja) | 1982-11-20 | 1982-11-20 | スパツタ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5993878A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6115966A (ja) * | 1984-06-30 | 1986-01-24 | Shimadzu Corp | スパツタリング装置 |
US5069770A (en) * | 1990-07-23 | 1991-12-03 | Eastman Kodak Company | Sputtering process employing an enclosed sputtering target |
-
1982
- 1982-11-20 JP JP20289982A patent/JPS5993878A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6115966A (ja) * | 1984-06-30 | 1986-01-24 | Shimadzu Corp | スパツタリング装置 |
US5069770A (en) * | 1990-07-23 | 1991-12-03 | Eastman Kodak Company | Sputtering process employing an enclosed sputtering target |
Also Published As
Publication number | Publication date |
---|---|
JPS626639B2 (enrdf_load_stackoverflow) | 1987-02-12 |
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