JPS6262075B2 - - Google Patents

Info

Publication number
JPS6262075B2
JPS6262075B2 JP16707982A JP16707982A JPS6262075B2 JP S6262075 B2 JPS6262075 B2 JP S6262075B2 JP 16707982 A JP16707982 A JP 16707982A JP 16707982 A JP16707982 A JP 16707982A JP S6262075 B2 JPS6262075 B2 JP S6262075B2
Authority
JP
Japan
Prior art keywords
incident position
resistance
semiconductor device
detecting
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16707982A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5956774A (ja
Inventor
Yoshitaka Terada
Akinaga Yamamoto
Namyoshi Sugiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP57167079A priority Critical patent/JPS5956774A/ja
Publication of JPS5956774A publication Critical patent/JPS5956774A/ja
Publication of JPS6262075B2 publication Critical patent/JPS6262075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP57167079A 1982-09-24 1982-09-24 粒子線等の入射位置検出用半導体装置 Granted JPS5956774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57167079A JPS5956774A (ja) 1982-09-24 1982-09-24 粒子線等の入射位置検出用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57167079A JPS5956774A (ja) 1982-09-24 1982-09-24 粒子線等の入射位置検出用半導体装置

Publications (2)

Publication Number Publication Date
JPS5956774A JPS5956774A (ja) 1984-04-02
JPS6262075B2 true JPS6262075B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=15843008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57167079A Granted JPS5956774A (ja) 1982-09-24 1982-09-24 粒子線等の入射位置検出用半導体装置

Country Status (1)

Country Link
JP (1) JPS5956774A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010064693A1 (ja) 2008-12-03 2010-06-10 国立大学法人東北大学 放射線の位置を２次元で検出する半導体検出器及びそれを用いた放射線の２次元位置検出方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61153552A (ja) * 1984-12-26 1986-07-12 Nec Corp 自動ｘ線回折装置
JP4748567B2 (ja) * 2005-02-25 2011-08-17 株式会社東芝 放射線入射位置検出装置
JP2007071823A (ja) 2005-09-09 2007-03-22 Sharp Corp 受光素子ならびにそれを備えたセンサおよび電子機器
NL2003125A1 (nl) * 2008-08-05 2010-02-08 Asml Netherlands Bv Optical position sensor, a position sensitive detector, a lithographic apparatus and a method for determining an absolute position of a movable object to be used in a relative position measurement system.
JP2024154718A (ja) * 2023-04-19 2024-10-31 浜松ホトニクス株式会社 半導体光位置検出器、及び、半導体光位置検出器アレイ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010064693A1 (ja) 2008-12-03 2010-06-10 国立大学法人東北大学 放射線の位置を２次元で検出する半導体検出器及びそれを用いた放射線の２次元位置検出方法

Also Published As

Publication number Publication date
JPS5956774A (ja) 1984-04-02

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