JPH0476055B2 - - Google Patents
Info
- Publication number
- JPH0476055B2 JPH0476055B2 JP59230778A JP23077884A JPH0476055B2 JP H0476055 B2 JPH0476055 B2 JP H0476055B2 JP 59230778 A JP59230778 A JP 59230778A JP 23077884 A JP23077884 A JP 23077884A JP H0476055 B2 JPH0476055 B2 JP H0476055B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- semiconductor
- incident
- particle beam
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 59
- 239000002245 particle Substances 0.000 claims description 55
- 238000001514 detection method Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 31
- 230000035945 sensitivity Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- -1 boron ions Chemical class 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- YYPYFBVEXBVLBS-UHFFFAOYSA-N [B].[S] Chemical compound [B].[S] YYPYFBVEXBVLBS-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59230778A JPS61108930A (ja) | 1984-11-01 | 1984-11-01 | 粒子線等の入射位置を検出するための半導体入射位置検出装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59230778A JPS61108930A (ja) | 1984-11-01 | 1984-11-01 | 粒子線等の入射位置を検出するための半導体入射位置検出装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61108930A JPS61108930A (ja) | 1986-05-27 |
| JPH0476055B2 true JPH0476055B2 (enrdf_load_stackoverflow) | 1992-12-02 |
Family
ID=16913112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59230778A Granted JPS61108930A (ja) | 1984-11-01 | 1984-11-01 | 粒子線等の入射位置を検出するための半導体入射位置検出装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61108930A (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR890010539A (ko) * | 1987-12-08 | 1989-08-09 | 시끼모리야 | 감열식 유량센서 |
| JPH0674804A (ja) * | 1992-08-28 | 1994-03-18 | Mitsubishi Electric Corp | 感熱式流量センサ |
| JP2908942B2 (ja) * | 1992-08-28 | 1999-06-23 | 三菱電機株式会社 | 感熱式流量センサ |
| JP4748567B2 (ja) * | 2005-02-25 | 2011-08-17 | 株式会社東芝 | 放射線入射位置検出装置 |
| JP2007071823A (ja) | 2005-09-09 | 2007-03-22 | Sharp Corp | 受光素子ならびにそれを備えたセンサおよび電子機器 |
| JP4452838B2 (ja) * | 2006-11-01 | 2010-04-21 | 国立大学法人東北大学 | 半導体検出器ブロック及びこれを用いた陽電子断層撮影装置 |
| DE112008003827T5 (de) * | 2008-04-24 | 2011-02-17 | Sumitomo Heavy Industries, Ltd. | Halbleiterdetektorblock und Positronenemissionstomografieapparat, der diesen verwendet |
| WO2010064693A1 (ja) * | 2008-12-03 | 2010-06-10 | 国立大学法人東北大学 | 放射線の位置を２次元で検出する半導体検出器及びそれを用いた放射線の２次元位置検出方法 |
-
1984
- 1984-11-01 JP JP59230778A patent/JPS61108930A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61108930A (ja) | 1986-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |