JPS61108930A - 粒子線等の入射位置を検出するための半導体入射位置検出装置 - Google Patents

粒子線等の入射位置を検出するための半導体入射位置検出装置

Info

Publication number
JPS61108930A
JPS61108930A JP59230778A JP23077884A JPS61108930A JP S61108930 A JPS61108930 A JP S61108930A JP 59230778 A JP59230778 A JP 59230778A JP 23077884 A JP23077884 A JP 23077884A JP S61108930 A JPS61108930 A JP S61108930A
Authority
JP
Japan
Prior art keywords
incident position
semiconductor
resistance
detection device
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59230778A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476055B2 (enrdf_load_stackoverflow
Inventor
Akinaga Yamamoto
晃永 山本
Yoshitaka Terada
由孝 寺田
Seiji Yamaguchi
誠二 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP59230778A priority Critical patent/JPS61108930A/ja
Publication of JPS61108930A publication Critical patent/JPS61108930A/ja
Publication of JPH0476055B2 publication Critical patent/JPH0476055B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59230778A 1984-11-01 1984-11-01 粒子線等の入射位置を検出するための半導体入射位置検出装置 Granted JPS61108930A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59230778A JPS61108930A (ja) 1984-11-01 1984-11-01 粒子線等の入射位置を検出するための半導体入射位置検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59230778A JPS61108930A (ja) 1984-11-01 1984-11-01 粒子線等の入射位置を検出するための半導体入射位置検出装置

Publications (2)

Publication Number Publication Date
JPS61108930A true JPS61108930A (ja) 1986-05-27
JPH0476055B2 JPH0476055B2 (enrdf_load_stackoverflow) 1992-12-02

Family

ID=16913112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59230778A Granted JPS61108930A (ja) 1984-11-01 1984-11-01 粒子線等の入射位置を検出するための半導体入射位置検出装置

Country Status (1)

Country Link
JP (1) JPS61108930A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912974A (en) * 1987-12-08 1990-04-03 Mitsubishi Denki Kabushiki Kaisha Thermal flow sensor
US5351537A (en) * 1992-08-28 1994-10-04 Mitsubishi Denki Kabushiki Kaisha Heat-sensitive flow rate sensor having a longitudinal wiring pattern for uniform temperature distribution
US5361634A (en) * 1992-08-28 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Heat-sensitive flow rate sensor
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法
JP2008116260A (ja) * 2006-11-01 2008-05-22 Tohoku Univ 半導体検出器ブロック及びこれを用いた陽電子断層撮影装置
US7381940B2 (en) 2005-09-09 2008-06-03 Sharp Kabushiki Kaisha Light receiving element for position detection having a plurality of resistance units and sensor and electronic apparatus having the same
WO2009130782A1 (ja) * 2008-04-24 2009-10-29 住友重機械工業株式会社 半導体検出器ブロック及びこれを用いた陽電子断層撮影装置
WO2010064693A1 (ja) * 2008-12-03 2010-06-10 国立大学法人東北大学 放射線の位置を２次元で検出する半導体検出器及びそれを用いた放射線の２次元位置検出方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912974A (en) * 1987-12-08 1990-04-03 Mitsubishi Denki Kabushiki Kaisha Thermal flow sensor
US5351537A (en) * 1992-08-28 1994-10-04 Mitsubishi Denki Kabushiki Kaisha Heat-sensitive flow rate sensor having a longitudinal wiring pattern for uniform temperature distribution
US5361634A (en) * 1992-08-28 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Heat-sensitive flow rate sensor
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法
US7381940B2 (en) 2005-09-09 2008-06-03 Sharp Kabushiki Kaisha Light receiving element for position detection having a plurality of resistance units and sensor and electronic apparatus having the same
JP2008116260A (ja) * 2006-11-01 2008-05-22 Tohoku Univ 半導体検出器ブロック及びこれを用いた陽電子断層撮影装置
WO2009130782A1 (ja) * 2008-04-24 2009-10-29 住友重機械工業株式会社 半導体検出器ブロック及びこれを用いた陽電子断層撮影装置
WO2010064693A1 (ja) * 2008-12-03 2010-06-10 国立大学法人東北大学 放射線の位置を２次元で検出する半導体検出器及びそれを用いた放射線の２次元位置検出方法
US8785865B2 (en) 2008-12-03 2014-07-22 Tohoku University Semiconductor detector for two-dimensionally detecting radiation positions and method for two-dimensionally detecting radiation positions using the same
JP5622339B2 (ja) * 2008-12-03 2014-11-12 国立大学法人東北大学 放射線の位置を２次元で検出する半導体２次元位置検出器及びそれを用いた陽電子断層撮影装置並びに放射線の２次元位置検出方法

Also Published As

Publication number Publication date
JPH0476055B2 (enrdf_load_stackoverflow) 1992-12-02

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