JPS5956774A - 粒子線等の入射位置検出用半導体装置 - Google Patents

粒子線等の入射位置検出用半導体装置

Info

Publication number
JPS5956774A
JPS5956774A JP57167079A JP16707982A JPS5956774A JP S5956774 A JPS5956774 A JP S5956774A JP 57167079 A JP57167079 A JP 57167079A JP 16707982 A JP16707982 A JP 16707982A JP S5956774 A JPS5956774 A JP S5956774A
Authority
JP
Japan
Prior art keywords
incident position
detecting
semiconductor device
particle beam
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57167079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262075B2 (enrdf_load_stackoverflow
Inventor
Yoshitaka Terada
由孝 寺田
Akinaga Yamamoto
晃永 山本
Namiyoshi Sugiura
杉浦　南祥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu TV Co Ltd
Original Assignee
Hamamatsu TV Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu TV Co Ltd filed Critical Hamamatsu TV Co Ltd
Priority to JP57167079A priority Critical patent/JPS5956774A/ja
Publication of JPS5956774A publication Critical patent/JPS5956774A/ja
Publication of JPS6262075B2 publication Critical patent/JPS6262075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Measurement Of Radiation (AREA)
JP57167079A 1982-09-24 1982-09-24 粒子線等の入射位置検出用半導体装置 Granted JPS5956774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57167079A JPS5956774A (ja) 1982-09-24 1982-09-24 粒子線等の入射位置検出用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57167079A JPS5956774A (ja) 1982-09-24 1982-09-24 粒子線等の入射位置検出用半導体装置

Publications (2)

Publication Number Publication Date
JPS5956774A true JPS5956774A (ja) 1984-04-02
JPS6262075B2 JPS6262075B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=15843008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57167079A Granted JPS5956774A (ja) 1982-09-24 1982-09-24 粒子線等の入射位置検出用半導体装置

Country Status (1)

Country Link
JP (1) JPS5956774A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61153552A (ja) * 1984-12-26 1986-07-12 Nec Corp 自動ｘ線回折装置
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法
US7381940B2 (en) 2005-09-09 2008-06-03 Sharp Kabushiki Kaisha Light receiving element for position detection having a plurality of resistance units and sensor and electronic apparatus having the same
JP2010050448A (ja) * 2008-08-05 2010-03-04 Asml Netherlands Bv 光学位置センサ、位置検出器、リソグラフィ装置、及び、相対位置測定システムに使用される可動オブジェクトの絶対位置を割り出す方法
WO2024219040A1 (ja) * 2023-04-19 2024-10-24 浜松ホトニクス株式会社 半導体光位置検出器、及び、半導体光位置検出器アレイ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010064693A1 (ja) 2008-12-03 2010-06-10 国立大学法人東北大学 放射線の位置を２次元で検出する半導体検出器及びそれを用いた放射線の２次元位置検出方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61153552A (ja) * 1984-12-26 1986-07-12 Nec Corp 自動ｘ線回折装置
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法
US7381940B2 (en) 2005-09-09 2008-06-03 Sharp Kabushiki Kaisha Light receiving element for position detection having a plurality of resistance units and sensor and electronic apparatus having the same
JP2010050448A (ja) * 2008-08-05 2010-03-04 Asml Netherlands Bv 光学位置センサ、位置検出器、リソグラフィ装置、及び、相対位置測定システムに使用される可動オブジェクトの絶対位置を割り出す方法
WO2024219040A1 (ja) * 2023-04-19 2024-10-24 浜松ホトニクス株式会社 半導体光位置検出器、及び、半導体光位置検出器アレイ

Also Published As

Publication number Publication date
JPS6262075B2 (enrdf_load_stackoverflow) 1987-12-24

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