JPS6259912B2 - - Google Patents

Info

Publication number
JPS6259912B2
JPS6259912B2 JP3840382A JP3840382A JPS6259912B2 JP S6259912 B2 JPS6259912 B2 JP S6259912B2 JP 3840382 A JP3840382 A JP 3840382A JP 3840382 A JP3840382 A JP 3840382A JP S6259912 B2 JPS6259912 B2 JP S6259912B2
Authority
JP
Japan
Prior art keywords
light
receiving element
emitting element
wavelength
optical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3840382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58155778A (ja
Inventor
Toshimi Ookubo
Takashi Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP57038403A priority Critical patent/JPS58155778A/ja
Publication of JPS58155778A publication Critical patent/JPS58155778A/ja
Publication of JPS6259912B2 publication Critical patent/JPS6259912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Geophysics And Detection Of Objects (AREA)
JP57038403A 1982-03-10 1982-03-10 光センサ Granted JPS58155778A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57038403A JPS58155778A (ja) 1982-03-10 1982-03-10 光センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038403A JPS58155778A (ja) 1982-03-10 1982-03-10 光センサ

Publications (2)

Publication Number Publication Date
JPS58155778A JPS58155778A (ja) 1983-09-16
JPS6259912B2 true JPS6259912B2 (enrdf_load_stackoverflow) 1987-12-14

Family

ID=12524324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038403A Granted JPS58155778A (ja) 1982-03-10 1982-03-10 光センサ

Country Status (1)

Country Link
JP (1) JPS58155778A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262435A (ja) * 1984-06-08 1985-12-25 Nec Kyushu Ltd 半導体組立装置におけるボンデイングワイヤ−供給装置
WO2011016908A1 (en) * 2009-08-03 2011-02-10 Illinois Tool Works Inc. Optical interruption sensor with opposed light emitting diodes

Also Published As

Publication number Publication date
JPS58155778A (ja) 1983-09-16

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