JPS6259905B2 - - Google Patents

Info

Publication number
JPS6259905B2
JPS6259905B2 JP57046028A JP4602882A JPS6259905B2 JP S6259905 B2 JPS6259905 B2 JP S6259905B2 JP 57046028 A JP57046028 A JP 57046028A JP 4602882 A JP4602882 A JP 4602882A JP S6259905 B2 JPS6259905 B2 JP S6259905B2
Authority
JP
Japan
Prior art keywords
crystal
layer
junction
inp
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57046028A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58162078A (ja
Inventor
Haruo Nagai
Susumu Hata
Susumu Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57046028A priority Critical patent/JPS58162078A/ja
Publication of JPS58162078A publication Critical patent/JPS58162078A/ja
Publication of JPS6259905B2 publication Critical patent/JPS6259905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials

Landscapes

  • Light Receiving Elements (AREA)
JP57046028A 1982-03-23 1982-03-23 半導体受光素子 Granted JPS58162078A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57046028A JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57046028A JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Publications (2)

Publication Number Publication Date
JPS58162078A JPS58162078A (ja) 1983-09-26
JPS6259905B2 true JPS6259905B2 (en, 2012) 1987-12-14

Family

ID=12735584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57046028A Granted JPS58162078A (ja) 1982-03-23 1982-03-23 半導体受光素子

Country Status (1)

Country Link
JP (1) JPS58162078A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0280908U (en, 2012) * 1988-12-09 1990-06-21

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4010337B2 (ja) * 1995-02-02 2007-11-21 住友電気工業株式会社 ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法
JP5011607B2 (ja) * 2001-04-16 2012-08-29 住友電気工業株式会社 受光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0280908U (en, 2012) * 1988-12-09 1990-06-21

Also Published As

Publication number Publication date
JPS58162078A (ja) 1983-09-26

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