JPS6259589A - 横型ボ−ト法の３−５族化合物半導体単結晶製造方法及びこれに使用する石英ガラス管装置 - Google Patents
横型ボ−ト法の３−５族化合物半導体単結晶製造方法及びこれに使用する石英ガラス管装置Info
- Publication number
- JPS6259589A JPS6259589A JP19782385A JP19782385A JPS6259589A JP S6259589 A JPS6259589 A JP S6259589A JP 19782385 A JP19782385 A JP 19782385A JP 19782385 A JP19782385 A JP 19782385A JP S6259589 A JPS6259589 A JP S6259589A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- glass tube
- temperature
- group
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000013078 crystal Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 20
- 150000001875 compounds Chemical class 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910021478 group 5 element Inorganic materials 0.000 claims description 9
- 239000000178 monomer Substances 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 230000005496 eutectics Effects 0.000 abstract description 2
- 238000010899 nucleation Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19782385A JPS6259589A (ja) | 1985-09-09 | 1985-09-09 | 横型ボ−ト法の３−５族化合物半導体単結晶製造方法及びこれに使用する石英ガラス管装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19782385A JPS6259589A (ja) | 1985-09-09 | 1985-09-09 | 横型ボ−ト法の３−５族化合物半導体単結晶製造方法及びこれに使用する石英ガラス管装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6259589A true JPS6259589A (ja) | 1987-03-16 |
| JPH0526756B2 JPH0526756B2 (enrdf_load_stackoverflow) | 1993-04-19 |
Family
ID=16380931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19782385A Granted JPS6259589A (ja) | 1985-09-09 | 1985-09-09 | 横型ボ−ト法の３−５族化合物半導体単結晶製造方法及びこれに使用する石英ガラス管装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6259589A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04244387A (ja) * | 1991-01-31 | 1992-09-01 | Shin Etsu Handotai Co Ltd | クランプ回転軸に対する単結晶棒位置決め方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56164095A (en) * | 1980-05-23 | 1981-12-16 | Sanken Electric Co Ltd | Preparation of semiconductor using sealed container |
| JPS58112038A (ja) * | 1981-12-25 | 1983-07-04 | Kokusai Electric Co Ltd | 加圧合成装置における合成成分の蒸気圧自動制御方法及び装置 |
-
1985
- 1985-09-09 JP JP19782385A patent/JPS6259589A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56164095A (en) * | 1980-05-23 | 1981-12-16 | Sanken Electric Co Ltd | Preparation of semiconductor using sealed container |
| JPS58112038A (ja) * | 1981-12-25 | 1983-07-04 | Kokusai Electric Co Ltd | 加圧合成装置における合成成分の蒸気圧自動制御方法及び装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04244387A (ja) * | 1991-01-31 | 1992-09-01 | Shin Etsu Handotai Co Ltd | クランプ回転軸に対する単結晶棒位置決め方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0526756B2 (enrdf_load_stackoverflow) | 1993-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20030145782A1 (en) | Method for producing a semiconductor crystal | |
| KR20030092305A (ko) | 고온 언도우프 막 증착 설비의 챔버 외벽에 대한 온도측정장치 | |
| US2895858A (en) | Method of producing semiconductor crystal bodies | |
| JPH024556B2 (enrdf_load_stackoverflow) | ||
| US5041186A (en) | Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas | |
| Warren | Procedures and apparatus for zone purification of the alkali halides | |
| JPS6259589A (ja) | 横型ボ−ト法の３−５族化合物半導体単結晶製造方法及びこれに使用する石英ガラス管装置 | |
| JP2735960B2 (ja) | 液面制御方法 | |
| Huang et al. | SiO vapor pressure in an SiO2 glass/Si melt/SiO gas equilibrium system | |
| KR101916831B1 (ko) | 잉곳 성장장치의 자기장 보정장치 | |
| JP2542435B2 (ja) | 結晶成長方法 | |
| JPH0543106Y2 (enrdf_load_stackoverflow) | ||
| JPS627695A (ja) | 化合物半導体単結晶の製造方法 | |
| JP2987998B2 (ja) | 減圧ｃｖｄ装置 | |
| JPH0651275U (ja) | 炭化ケイ素単結晶育成装置 | |
| KR940009940B1 (ko) | 고해리압화합물반도체 단결정성장방법 및 그의 장치 | |
| US3275557A (en) | Method of making mercury-doped germanium semiconductor crystals | |
| JP2575415B2 (ja) | 結晶成長の監視方法 | |
| WO2025141430A1 (en) | Method and system for continuous growth of group iiia metal-containing films | |
| KR100303566B1 (ko) | 반도체소자 제조용 급속열처리 화학증착설비의 온도측정장치 및 그 온도측정방법 | |
| JPH07110797B2 (ja) | 高蒸気圧成分を含む化合物半導体単結晶の製造方法 | |
| CN115627526A (zh) | 一种坩埚及碳化硅长晶装置 | |
| JP3185421B2 (ja) | 化合物結晶の製造方法および装置 | |
| JP3010833B2 (ja) | 化合物半導体の蒸気圧制御方法及び装置 | |
| JP2667242B2 (ja) | 減圧式単結晶引上装置 |