JPS6258549B2 - - Google Patents

Info

Publication number
JPS6258549B2
JPS6258549B2 JP56105583A JP10558381A JPS6258549B2 JP S6258549 B2 JPS6258549 B2 JP S6258549B2 JP 56105583 A JP56105583 A JP 56105583A JP 10558381 A JP10558381 A JP 10558381A JP S6258549 B2 JPS6258549 B2 JP S6258549B2
Authority
JP
Japan
Prior art keywords
photodiode
solid
buried layer
layer
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56105583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS589362A (ja
Inventor
Toyokazu Nagano
Kazunori Imai
Yoshinori Mitomi
Shinichi Nagai
Toshuki Chiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56105583A priority Critical patent/JPS589362A/ja
Publication of JPS589362A publication Critical patent/JPS589362A/ja
Publication of JPS6258549B2 publication Critical patent/JPS6258549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56105583A 1981-07-08 1981-07-08 固体撮像素子 Granted JPS589362A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56105583A JPS589362A (ja) 1981-07-08 1981-07-08 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105583A JPS589362A (ja) 1981-07-08 1981-07-08 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS589362A JPS589362A (ja) 1983-01-19
JPS6258549B2 true JPS6258549B2 (zh) 1987-12-07

Family

ID=14411516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105583A Granted JPS589362A (ja) 1981-07-08 1981-07-08 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS589362A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324144A (ja) * 1986-07-02 1988-02-01 Sanyo Kokusaku Pulp Co Ltd 爆発性雰囲気内を走行中のシ−トの赤外線水分測定方法及び装置
JPS6324145A (ja) * 1986-07-02 1988-02-01 Sanyo Kokusaku Pulp Co Ltd ドライヤ−パ−トにおけるシ−トの水分測定方法及び装置
JP2872237B2 (ja) * 1987-04-24 1999-03-17 株式会社日立製作所 固体撮像装置
DE102018103171A1 (de) * 2017-11-23 2019-05-23 Tdk Electronics Ag Verfahren zum Bestimmen von Eigenschaften einer Beschichtung auf einer transparenten Folie, Verfahren zur Herstellung einer Kondensatorfolie und Einrichtung zum Bestimmen von Eigenschaften einer Beschichtung auf einer transparenten Folie

Also Published As

Publication number Publication date
JPS589362A (ja) 1983-01-19

Similar Documents

Publication Publication Date Title
US6552320B1 (en) Image sensor structure
JPH01147861A (ja) 固体撮像装置
US6150704A (en) Photoelectric conversion apparatus and image sensor
US5684312A (en) Solid-state imaging device having contact buffer layer interconnecting gate and vertical scan line
US6326655B1 (en) Solid state imaging device having a gate electrode formed over a potential dip
US5065206A (en) Photoelectric converting device with accumulating gate region
US7078751B2 (en) Solid-state imaging device
JPS6258549B2 (zh)
EP0487989B1 (en) Solid-state imaging device
JPS6242426B2 (zh)
JPS6318387B2 (zh)
KR100790584B1 (ko) 부분 완전 공핍 플로우팅 확산 노드를 갖는 이미지 센서
JPS6160592B2 (zh)
US20070290285A1 (en) Semiconductor device, solid state image pickup device and manufacturing method thereof
JP3922351B2 (ja) 電荷結合デバイス
JPS6255961A (ja) 固体撮像装置
JPH0821704B2 (ja) 固体撮像素子
JPH0436582B2 (zh)
JP2540834B2 (ja) Ｍｏｓ型イメ−ジセンサ
JPH0794699A (ja) 固体撮像素子
JPS60187053A (ja) Ｃｃｄ型固体撮像素子
JPS59163860A (ja) 固体撮像素子
JPS60170383A (ja) 固体撮像素子
JPS63292670A (ja) 固体撮像素子
JP2695983B2 (ja) 固体撮像装置