JPS6258549B2 - - Google Patents

Info

Publication number
JPS6258549B2
JPS6258549B2 JP56105583A JP10558381A JPS6258549B2 JP S6258549 B2 JPS6258549 B2 JP S6258549B2 JP 56105583 A JP56105583 A JP 56105583A JP 10558381 A JP10558381 A JP 10558381A JP S6258549 B2 JPS6258549 B2 JP S6258549B2
Authority
JP
Japan
Prior art keywords
photodiode
solid
buried layer
layer
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56105583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS589362A (ja
Inventor
Toyokazu Nagano
Kazunori Imai
Yoshinori Mitomi
Shinichi Nagai
Toshuki Chiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56105583A priority Critical patent/JPS589362A/ja
Publication of JPS589362A publication Critical patent/JPS589362A/ja
Publication of JPS6258549B2 publication Critical patent/JPS6258549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56105583A 1981-07-08 1981-07-08 固体撮像素子 Granted JPS589362A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56105583A JPS589362A (ja) 1981-07-08 1981-07-08 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105583A JPS589362A (ja) 1981-07-08 1981-07-08 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS589362A JPS589362A (ja) 1983-01-19
JPS6258549B2 true JPS6258549B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=14411516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105583A Granted JPS589362A (ja) 1981-07-08 1981-07-08 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS589362A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324144A (ja) * 1986-07-02 1988-02-01 Sanyo Kokusaku Pulp Co Ltd 爆発性雰囲気内を走行中のシ−トの赤外線水分測定方法及び装置
JPS6324145A (ja) * 1986-07-02 1988-02-01 Sanyo Kokusaku Pulp Co Ltd ドライヤ−パ−トにおけるシ−トの水分測定方法及び装置
JP2872237B2 (ja) * 1987-04-24 1999-03-17 株式会社日立製作所 固体撮像装置
DE102018103171A1 (de) * 2017-11-23 2019-05-23 Tdk Electronics Ag Verfahren zum Bestimmen von Eigenschaften einer Beschichtung auf einer transparenten Folie, Verfahren zur Herstellung einer Kondensatorfolie und Einrichtung zum Bestimmen von Eigenschaften einer Beschichtung auf einer transparenten Folie

Also Published As

Publication number Publication date
JPS589362A (ja) 1983-01-19

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