JPS6257954B2 - - Google Patents

Info

Publication number
JPS6257954B2
JPS6257954B2 JP54161692A JP16169279A JPS6257954B2 JP S6257954 B2 JPS6257954 B2 JP S6257954B2 JP 54161692 A JP54161692 A JP 54161692A JP 16169279 A JP16169279 A JP 16169279A JP S6257954 B2 JPS6257954 B2 JP S6257954B2
Authority
JP
Japan
Prior art keywords
layer
electrode
radiation
radiation detector
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54161692A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55104776A (en
Inventor
Deiin Kingusurii Jatsuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS55104776A publication Critical patent/JPS55104776A/ja
Publication of JPS6257954B2 publication Critical patent/JPS6257954B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
JP16169279A 1978-12-14 1979-12-14 Solid radiation detector and array of such detectors Granted JPS55104776A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/969,545 US4233514A (en) 1978-12-14 1978-12-14 Solid state radiation detector and arrays thereof

Publications (2)

Publication Number Publication Date
JPS55104776A JPS55104776A (en) 1980-08-11
JPS6257954B2 true JPS6257954B2 (enExample) 1987-12-03

Family

ID=25515670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16169279A Granted JPS55104776A (en) 1978-12-14 1979-12-14 Solid radiation detector and array of such detectors

Country Status (6)

Country Link
US (1) US4233514A (enExample)
JP (1) JPS55104776A (enExample)
DE (1) DE2949862A1 (enExample)
ES (2) ES486947A0 (enExample)
FR (1) FR2444341B1 (enExample)
GB (1) GB2037077B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670673A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Photoelectric converter
US4363969A (en) * 1980-07-16 1982-12-14 Ong Poen S Light switched segmented tomography detector
JPS58117478A (ja) * 1982-01-05 1983-07-13 Fuji Xerox Co Ltd 放射線ｃｔスキャナ装置用放射線センサアレイ
JPS58182572A (ja) * 1982-04-20 1983-10-25 Toshiba Corp 二次元放射線検出器
JPS6243586A (ja) * 1985-08-21 1987-02-25 Nippon Mining Co Ltd 放射線検出器
FR2601499B1 (fr) * 1986-07-08 1988-09-30 Thomson Csf Detecteur d'image a photoconducteur a memoire
FR2605167B1 (fr) * 1986-10-10 1989-03-31 Thomson Csf Capteur d'images electrostatique
KR890702257A (ko) * 1987-10-15 1989-12-23 원본 미기재 저 노이즈 광검출 및 그것을 위한 광 검출기
DE4227096A1 (de) * 1992-08-17 1994-02-24 Philips Patentverwaltung Röntgenbilddetektor
JPH10510103A (ja) * 1995-09-12 1998-09-29 フィリップス エレクトロニクス エヌ ベー Ｘ線画像センサ
JP3805100B2 (ja) 1997-04-10 2006-08-02 キヤノン株式会社 光電変換装置
JP4059463B2 (ja) * 1998-12-10 2008-03-12 株式会社島津製作所 放射線検出装置
JP3832615B2 (ja) * 1999-08-26 2006-10-11 株式会社島津製作所 放射線検出装置
WO2002063340A1 (en) * 2001-02-07 2002-08-15 Kyoto Semiconductor Corporation Radiation detector and radiation detecting element
US7138290B2 (en) * 2004-12-03 2006-11-21 Micron Technology, Inc. Methods of depositing silver onto a metal selenide-comprising surface and methods of depositing silver onto a selenium-comprising surface
US7507512B2 (en) * 2005-11-29 2009-03-24 General Electric Company Particle-in-binder X-ray sensitive coating using polyimide binder
US9269838B2 (en) 2011-12-09 2016-02-23 Karim S. Karim Radiation detector system and method of manufacture
KR102729137B1 (ko) 2015-07-14 2024-11-13 도스 스마트 이미징 디지털 이미징 시스템에서의 방사선 감지를 위한 장치
US9698193B1 (en) 2016-09-15 2017-07-04 Ka Imaging Inc. Multi-sensor pixel architecture for use in a digital imaging system
CN110132326B (zh) * 2019-05-16 2021-08-17 京东方科技集团股份有限公司 Msm型探测器及其偏置电压调整方法和装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2706792A (en) * 1951-05-25 1955-04-19 Gen Electric X-ray detection
US2706791A (en) * 1951-06-18 1955-04-19 Gen Electric Semi-conductor
US3602721A (en) * 1967-11-20 1971-08-31 Malsushita Electric Ind Co Ltd Photoelectric device with enhanced photoconductive sensitivity and storage effect of input radiation
BE758451A (fr) * 1969-11-07 1971-04-16 Siemens Ag Detecteur pour le comptage de particules nucleaires et de rayons x"
DE2107928A1 (en) * 1971-02-19 1972-10-05 Siemens Ag Radiation-sensitive resistance cell - contg selenium layer as sensitive element
DE2141934A1 (de) * 1971-08-20 1973-03-01 Siemens Ag Strahlenmessgeraet
DE2361635A1 (de) * 1973-12-11 1975-06-12 Eichinger Peter Halbleiter-gammastrahlungsdetektor
US4085327A (en) * 1977-01-14 1978-04-18 General Electric Company Direct charge readout electron radiography apparatus with improved signal-to-noise ratio
GB1559664A (en) * 1977-02-17 1980-01-23 Tokyo Shibaura Electric Co Semiconductor radiation detector

Also Published As

Publication number Publication date
US4233514A (en) 1980-11-11
GB2037077A (en) 1980-07-02
FR2444341A1 (fr) 1980-07-11
FR2444341B1 (fr) 1985-10-04
ES8105482A1 (es) 1981-05-16
ES8101782A1 (es) 1980-12-16
DE2949862A1 (de) 1980-07-03
ES486947A0 (es) 1980-12-16
JPS55104776A (en) 1980-08-11
ES494233A0 (es) 1981-05-16
GB2037077B (en) 1983-04-13

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