JPH10510103A - X線画像センサ - Google Patents
X線画像センサInfo
- Publication number
- JPH10510103A JPH10510103A JP9511785A JP51178597A JPH10510103A JP H10510103 A JPH10510103 A JP H10510103A JP 9511785 A JP9511785 A JP 9511785A JP 51178597 A JP51178597 A JP 51178597A JP H10510103 A JPH10510103 A JP H10510103A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ray
- ray image
- image sensor
- photoconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 238000005253 cladding Methods 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 220
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000007689 inspection Methods 0.000 claims description 12
- 239000002344 surface layer Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 2
- 239000011669 selenium Substances 0.000 description 25
- 229910020669 PbOx Inorganic materials 0.000 description 11
- 239000002800 charge carrier Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 7
- 229910052711 selenium Inorganic materials 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 125000006839 xylylene group Chemical group 0.000 description 2
- BSFODEXXVBBYOC-UHFFFAOYSA-N 8-[4-(dimethylamino)butan-2-ylamino]quinolin-6-ol Chemical compound C1=CN=C2C(NC(CCN(C)C)C)=CC(O)=CC2=C1 BSFODEXXVBBYOC-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- -1 lead oxide compound Chemical class 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000002595 magnetic resonance imaging Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. − コモン電極(2)と、 − 個々のセンサ素子がコレクタ電極(3)により構成される複数のX線感応 センサ素子と、 − 酸化鉛類(PbOx)を含有し、コモン電極(2)とコレクタ電極(3) との間に設けられた光導電体層(6)とからなるX線画像センサ(1)であって 、 − パッシベーション層(7)が光導電体層(6)とコモン電極(2)との間 に設けられていることを特徴とするX線画像センサ。 2. パッシベーション層は電気的抵抗層であることを特徴とする請求項1記載 のX線画像センサ。 3. パッシベーション層は半導体層であることを特徴とする請求項1記載のX 線画像センサ。 4. バイアス層(8)がコモン電極と光導電体層との間に設けられていること を特徴とする請求項1記載のX線画像センサ。 5. バイアス層は、光導電体層のドープされた酸化鉛表面層であることを特徴 とする請求項5記載のX線画像センサ。 6. クラッド層(9)がコレクタ電極(3)と光導電体層(6)との間に設け られていることを特徴とする請求項1乃至5のうちいずれか1項記載のX線画像 センサ。 7. クラッド層は、非化学量論的酸化鉛層であることを特徴とする請求項6記 載のX線画像センサ。 8. 抵抗層(10)がクラッド層(9)とコレクタ電極(3)との間に設けら れていることを特徴とする請求項6又は7記載のX線画像センサ。 9. 酸化鉛光導電体層の組成は実質的に化学量論的であることを特徴とする請 求項1乃至8のうちいずれか1項記載のX線画像センサ。 10. − X線像を形成するため対象物を照射するX線ビームを放射するX線 源と、 − X線像から電子像信号を得るX線検出器(12)とからなるX線検査装置 (11)であって、 − X線検出器が請求項1乃至9のうちいずれか1項記載のX線画像センサに より構成されることを特徴とするX線検査装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95202471 | 1995-09-12 | ||
NL95202471.9 | 1995-09-12 | ||
PCT/IB1996/000885 WO1997010616A1 (en) | 1995-09-12 | 1996-09-02 | X-ray image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10510103A true JPH10510103A (ja) | 1998-09-29 |
Family
ID=8220629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9511785A Pending JPH10510103A (ja) | 1995-09-12 | 1996-09-02 | X線画像センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US5729021A (ja) |
EP (1) | EP0791230B1 (ja) |
JP (1) | JPH10510103A (ja) |
DE (1) | DE69637638D1 (ja) |
WO (1) | WO1997010616A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001053327A (ja) * | 1999-06-11 | 2001-02-23 | Koninkl Philips Electronics Nv | センサ |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000512084A (ja) * | 1997-04-02 | 2000-09-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | センサマトリックスを有するx線装置 |
DE69815252T2 (de) * | 1997-04-24 | 2004-04-29 | Koninklijke Philips Electronics N.V. | Belichtungssteuerung auf basis von einem bedeutenden teil eines röntgenstrahlbildes |
IL123006A (en) | 1998-01-20 | 2005-12-18 | Edge Medical Devices Ltd | X-ray imaging system |
US6060714A (en) * | 1998-01-23 | 2000-05-09 | Ois Optical Imaging Systems, Inc. | Large area imager with photo-imageable interface barrier layer |
DE19825450A1 (de) * | 1998-06-06 | 1999-12-09 | Philips Patentverwaltung | Röntgenbildsensor |
US6194727B1 (en) * | 1998-07-06 | 2001-02-27 | Direct Radiography Corp. | Direct radiographic imaging panel having a dielectric layer with an adjusted time constant |
IL126018A0 (en) | 1998-09-01 | 1999-05-09 | Edge Medical Devices Ltd | X-ray imaging system |
JP4059463B2 (ja) * | 1998-12-10 | 2008-03-12 | 株式会社島津製作所 | 放射線検出装置 |
US6326625B1 (en) | 1999-01-20 | 2001-12-04 | Edge Medical Devices Ltd. | X-ray imaging system |
CA2373651A1 (en) | 1999-05-10 | 2000-11-16 | Francois Lippens | Energy selective detection systems |
US6178225B1 (en) | 1999-06-04 | 2001-01-23 | Edge Medical Devices Ltd. | System and method for management of X-ray imaging facilities |
US20020121605A1 (en) * | 1999-06-17 | 2002-09-05 | Lutz Fink | Semiconductor sensor and method for its wiring |
DE19927694C1 (de) * | 1999-06-17 | 2000-11-02 | Lutz Fink | Halbleitersensor mit einer Pixelstruktur |
DE19945757A1 (de) * | 1999-09-24 | 2001-03-29 | Philips Corp Intellectual Pty | Röntgendetektor |
EP1136888B1 (en) * | 2000-03-22 | 2012-01-18 | FUJIFILM Corporation | Image recording medium and method of manufacturing an image recording medium |
JP3838849B2 (ja) * | 2000-03-28 | 2006-10-25 | 株式会社東芝 | X線平面検出器 |
TW458288U (en) * | 2001-03-08 | 2001-10-01 | Liau Guo Fu | X-ray image sensor |
US6737653B2 (en) * | 2001-03-12 | 2004-05-18 | Lg. Philips Lcd Co., Ltd. | X-ray detector and method of fabricating therefore |
FR2832220B1 (fr) * | 2001-11-14 | 2004-08-27 | Univ Paris Curie | Procede et dispositif d'imagerie radiologique |
JP4188619B2 (ja) * | 2002-04-23 | 2008-11-26 | 株式会社島津製作所 | X線検出器 |
US7196334B2 (en) * | 2003-04-24 | 2007-03-27 | Koninklijke Philips Electronics N.V. | X-ray detector element |
US7054410B2 (en) * | 2003-05-15 | 2006-05-30 | Varian Medical Systems, Inc. | Multi energy x-ray imager |
DE10323584B4 (de) * | 2003-05-20 | 2006-05-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung zur Detektion von Röntgenstrahlung und Verfahren zu deren Herstellung |
US20050056829A1 (en) * | 2003-09-17 | 2005-03-17 | Green Michael C. | Reducing dark current of photoconductor using heterojunction that maintains high x-ray sensitivity |
US7256402B1 (en) * | 2004-04-15 | 2007-08-14 | Denny Lee | Flat panel X-ray imager with a grid structure |
US7507512B2 (en) * | 2005-11-29 | 2009-03-24 | General Electric Company | Particle-in-binder X-ray sensitive coating using polyimide binder |
DE102005060794B3 (de) * | 2005-12-16 | 2007-06-14 | Siemens Ag | Flachbilddetektor |
DE102005060795A1 (de) * | 2005-12-16 | 2007-07-12 | Siemens Ag | Flachbilddetektor |
US8232531B2 (en) * | 2007-03-29 | 2012-07-31 | Varian Medical Systems, Inc. | Corrosion barrier layer for photoconductive X-ray imagers |
CA3012494C (en) | 2016-02-08 | 2022-09-20 | Thunder Bay Regional Health Research Institute | Amorphous lead oxide based energy detection devices and methods of manufacture thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4233514A (en) * | 1978-12-14 | 1980-11-11 | General Electric Company | Solid state radiation detector and arrays thereof |
US5187369A (en) * | 1990-10-01 | 1993-02-16 | General Electric Company | High sensitivity, high resolution, solid state x-ray imaging device with barrier layer |
DE4227096A1 (de) * | 1992-08-17 | 1994-02-24 | Philips Patentverwaltung | Röntgenbilddetektor |
US5319206A (en) * | 1992-12-16 | 1994-06-07 | E. I. Du Pont De Nemours And Company | Method and apparatus for acquiring an X-ray image using a solid state device |
US5381014B1 (en) * | 1993-12-29 | 1997-06-10 | Du Pont | Large area x-ray imager and method of fabrication |
US5498880A (en) * | 1995-01-12 | 1996-03-12 | E. I. Du Pont De Nemours And Company | Image capture panel using a solid state device |
US5563421A (en) * | 1995-06-07 | 1996-10-08 | Sterling Diagnostic Imaging, Inc. | Apparatus and method for eliminating residual charges in an image capture panel |
-
1996
- 1996-09-02 DE DE69637638T patent/DE69637638D1/de not_active Expired - Fee Related
- 1996-09-02 JP JP9511785A patent/JPH10510103A/ja active Pending
- 1996-09-02 EP EP96927167A patent/EP0791230B1/en not_active Expired - Lifetime
- 1996-09-02 WO PCT/IB1996/000885 patent/WO1997010616A1/en active IP Right Grant
- 1996-09-11 US US08/712,031 patent/US5729021A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001053327A (ja) * | 1999-06-11 | 2001-02-23 | Koninkl Philips Electronics Nv | センサ |
Also Published As
Publication number | Publication date |
---|---|
EP0791230B1 (en) | 2008-08-13 |
DE69637638D1 (de) | 2008-09-25 |
EP0791230A1 (en) | 1997-08-27 |
WO1997010616A1 (en) | 1997-03-20 |
US5729021A (en) | 1998-03-17 |
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