JPS6257265B2 - - Google Patents

Info

Publication number
JPS6257265B2
JPS6257265B2 JP56183394A JP18339481A JPS6257265B2 JP S6257265 B2 JPS6257265 B2 JP S6257265B2 JP 56183394 A JP56183394 A JP 56183394A JP 18339481 A JP18339481 A JP 18339481A JP S6257265 B2 JPS6257265 B2 JP S6257265B2
Authority
JP
Japan
Prior art keywords
etching
wiring pattern
mask
layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56183394A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5885567A (ja
Inventor
Koichiro Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56183394A priority Critical patent/JPS5885567A/ja
Publication of JPS5885567A publication Critical patent/JPS5885567A/ja
Publication of JPS6257265B2 publication Critical patent/JPS6257265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56183394A 1981-11-16 1981-11-16 半導体装置の製造方法 Granted JPS5885567A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56183394A JPS5885567A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56183394A JPS5885567A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5885567A JPS5885567A (ja) 1983-05-21
JPS6257265B2 true JPS6257265B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=16135003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56183394A Granted JPS5885567A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5885567A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53125777A (en) * 1977-04-08 1978-11-02 Nec Corp Manufacture for field effect transistor

Also Published As

Publication number Publication date
JPS5885567A (ja) 1983-05-21

Similar Documents

Publication Publication Date Title
US5022958A (en) Method of etching for integrated circuits with planarized dielectric
US4523975A (en) Integrated circuit planarizing process
JPS61182230A (ja) 半導体ウエーハの反応性スパツタクリーニング
JPS6324616A (ja) 半導体素子の製造方法およびこの方法による半導体素子
JPH0677483A (ja) 薄膜トランジスタ及びその製造方法
JPH04307933A (ja) タングステンプラグの形成方法
JPH0722145B2 (ja) 半導体装置の製造方法
US4923823A (en) Method of fabricating a self aligned semiconductor device
US4892845A (en) Method for forming contacts through a thick oxide layer on a semiconductive device
JPH02138750A (ja) 半導体装置の製造方法
CA1131796A (en) Method for fabricating mos device with self-aligned contacts
JPS62188229A (ja) 集積回路の製法
JPH0266939A (ja) 隔離された導体トラックが半導体の表面に設けられた半導体デバイスの製造方法
JPS6257265B2 (enrdf_load_stackoverflow)
US6221745B1 (en) High selectivity mask oxide etching to suppress silicon pits
JPS6257266B2 (enrdf_load_stackoverflow)
US5093274A (en) Semiconductor device and method for manufacture thereof
JPS6252950B2 (enrdf_load_stackoverflow)
JPS6354227B2 (enrdf_load_stackoverflow)
JPH07254607A (ja) 集積回路及びその製造方法
JP3835684B2 (ja) ヴィアホールの形成方法
KR100265839B1 (ko) 반도체 소자의 금속배선 형 성방법
JPS63260134A (ja) スル−・ホ−ルの形成方法
KR100268776B1 (ko) 반도체 소자 제조방법
JPS59150421A (ja) 半導体装置の製造方法