JPS5885567A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5885567A
JPS5885567A JP56183394A JP18339481A JPS5885567A JP S5885567 A JPS5885567 A JP S5885567A JP 56183394 A JP56183394 A JP 56183394A JP 18339481 A JP18339481 A JP 18339481A JP S5885567 A JPS5885567 A JP S5885567A
Authority
JP
Japan
Prior art keywords
mask
layer
etching
electrode
wiring pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56183394A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257265B2 (enrdf_load_stackoverflow
Inventor
Koichiro Kotani
小谷　紘一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56183394A priority Critical patent/JPS5885567A/ja
Publication of JPS5885567A publication Critical patent/JPS5885567A/ja
Publication of JPS6257265B2 publication Critical patent/JPS6257265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56183394A 1981-11-16 1981-11-16 半導体装置の製造方法 Granted JPS5885567A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56183394A JPS5885567A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56183394A JPS5885567A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5885567A true JPS5885567A (ja) 1983-05-21
JPS6257265B2 JPS6257265B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=16135003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56183394A Granted JPS5885567A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5885567A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53125777A (en) * 1977-04-08 1978-11-02 Nec Corp Manufacture for field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53125777A (en) * 1977-04-08 1978-11-02 Nec Corp Manufacture for field effect transistor

Also Published As

Publication number Publication date
JPS6257265B2 (enrdf_load_stackoverflow) 1987-11-30

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