JPS6257257B2 - - Google Patents

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Publication number
JPS6257257B2
JPS6257257B2 JP56134026A JP13402681A JPS6257257B2 JP S6257257 B2 JPS6257257 B2 JP S6257257B2 JP 56134026 A JP56134026 A JP 56134026A JP 13402681 A JP13402681 A JP 13402681A JP S6257257 B2 JPS6257257 B2 JP S6257257B2
Authority
JP
Japan
Prior art keywords
roughness
lead frame
film
plated
plated film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56134026A
Other languages
Japanese (ja)
Other versions
JPS5835950A (en
Inventor
Masahiro Koizumi
Hitoshi Oonuki
Tateo Tamamura
Tomio Iizuka
Susumu Okikawa
Hiroshi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56134026A priority Critical patent/JPS5835950A/en
Publication of JPS5835950A publication Critical patent/JPS5835950A/en
Publication of JPS6257257B2 publication Critical patent/JPS6257257B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48755—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To strengthen the junction between a lead frame and an Al wire, and to reduce secular degradation by forming an electric Ni plated film having not more than 0.5mum roughness onto the lead frame. CONSTITUTION:When an Al wire is joined onto an Ni plated film, difference is generated in shearing strength according to the difference of the roughness of the Ni plated film, and the more the surface is rough, the more a junction rate lowers. With the electrically plated Ni film, roughness is far smaller than a chemically plated film and approximately 0.1-0.3mum, and scatter is small. The rate of phosphorus and a brightener in the plated film is increased, and the roughness of the surface of the film is decreased and made 0.5mum or less. According to this constitution, the Al wire junction with a strong joined section is obtained while the secular degradation is also reduced, and the reliability of the device is improved.

Description

【発明の詳細な説明】 本発明は半導体装置に係り、特に、アルミニウ
ムワイヤにて、半導体素子上の電極とリードフレ
ームとを導電接続した半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which an electrode on a semiconductor element and a lead frame are electrically connected to each other by an aluminum wire.

従来のIC，LSI等の半導体装置における、半導
体素子上の電極とリードフレームとの接続は、金
またはアルミニウム（合金）ワイヤボンデイング
によつてなされている。 In conventional semiconductor devices such as ICs and LSIs, electrodes on semiconductor elements and lead frames are connected by gold or aluminum (alloy) wire bonding.

金ワイヤボンデイングの場合には、リードフレ
ームの表面にAuめつき膜が設けられ、一方、ア
ルミニウム（合金）ワイヤボンデイングの場合に
は、化学的にめつきしたNiめつき膜が、リード
フレームの表面に設けられている。 In the case of gold wire bonding, an Au plating film is provided on the surface of the lead frame, while in the case of aluminum (alloy) wire bonding, a chemically plated Ni plating film is provided on the surface of the lead frame. It is set in.

金ワイヤとAuめつき膜との導電接続は、性能
の面では極めて優れているが、ワイヤ及びリード
フレームに金を用いているため、コストが高いと
いう欠点がある。 Although the conductive connection between the gold wire and the Au-plated film is extremely superior in terms of performance, it has the drawback of high cost because gold is used for the wire and lead frame.

一方、アルミニウムワイヤと、その表面に化学
的にめつきしたNiめつき膜を施したFe―Ni合金
のリードフレームとの接続は、 (1) リードフレームのNiめつき膜のめつき速度
が遅いため長時間を要することからコストが高
いことと、 (2) Niめつき膜の表面が比較的あらいため、ボ
ンデイング時にアルミニウムワイヤと接合しに
くいこと、 (3) また、接合したとしても、剥離し易いため、
良好で信頼性のある接続が得られないこと、 などという欠点がある。 On the other hand, when connecting an aluminum wire to an Fe-Ni alloy lead frame with a chemically plated Ni plating film on its surface, (1) The plating speed of the Ni plating film on the lead frame is slow. (2) The surface of the Ni-plated film is relatively rough, so it is difficult to bond it to the aluminum wire during bonding. (3) Even if it is bonded, it will not peel off. Because it is easy,
Disadvantages include the lack of a good and reliable connection.

さらに又、アルミニウムワイヤによる半導体素
子上の電極とリードフレームとの接続には、直径
30μｍのアルミニウム細線が普通に使用されてい
る。 Furthermore, the diameter of the connection between the electrode on the semiconductor element and the lead frame using aluminum wire is
30 μm thin aluminum wire is commonly used.

このため、ボンデイング後、プラスチツクパツ
ケージする時に、リードフレーム側のワイヤ切れ
や、接合部の剥離を生ずるという問題がある。そ
の上に、製品として稼動中に室温以上の温度―例
えば150℃、200℃などの温度に長時間加熱される
ため接合部が劣化し、同様にワイヤ切れ、または
剥離が生ずるという問題がある。 For this reason, there is a problem in that when the plastic package is packaged after bonding, the wires on the lead frame side may break or the bonded portion may peel off. Furthermore, as the product is heated to a temperature above room temperature, such as 150°C or 200°C, for a long period of time during operation, the bonded portion deteriorates, and there is also the problem of wire breakage or peeling.

そのため、アルミニウムワイヤとリードフレー
ムのNiめつき膜との接合部の強度を向上し、好
適な接続を実現して信頼性の高い半導体装置を開
発することは、極めて重要である。また、一方、
半導体装置は低コストを指向しているため、リー
ドフレームのコスト低減も重要である。 Therefore, it is extremely important to improve the strength of the joint between the aluminum wire and the Ni-plated film of the lead frame, realize a suitable connection, and develop a highly reliable semiconductor device. Also, on the other hand,
Since semiconductor devices are aimed at low cost, it is also important to reduce the cost of lead frames.

したがつて、本発明の目的は、アルミニウムワ
イヤを接合されるNiめつき膜リードフレームの
コストを低減し、さらに前記Niめつき膜リード
フレームとアルミニウムワイヤとの容易かつ強固
な接合を得ることのできる半導体装置を提供する
にある。 Therefore, an object of the present invention is to reduce the cost of a Ni-plated film lead frame to which an aluminum wire is bonded, and to obtain an easy and strong bond between the Ni-plated film lead frame and the aluminum wire. Our goal is to provide semiconductor devices that can.

前記目的を達成するため、本発明においては、
リードフレームの表面に形成されるNiめつき膜
の表面あらさを0.5μｍ以下にし、アルミニウム
ワイヤとの接合性を改善している。 In order to achieve the above object, in the present invention,
The Ni plating film formed on the surface of the lead frame has a surface roughness of 0.5 μm or less to improve bonding with aluminum wire.

本発明は、つぎのような新規な事象の確認に基
づいてなされたものである。 The present invention was made based on the confirmation of the following novel phenomenon.

(1) Fe―Ni製リードフレームの表面へのNiめつ
き膜形成は、電気的な方法でも可能であるこ
と。この場合のNiめつき膜の生成時間は、化
学的方法に比べて1/5に短縮されること。これ
によつて、リードフレームの製造能率を上げ、
コストの低減をはかることができること。(1) It is possible to form a Ni plating film on the surface of a Fe-Ni lead frame using an electrical method. In this case, the time required to produce a Ni-plated film is reduced to one-fifth compared to chemical methods. This increases lead frame manufacturing efficiency and
Being able to reduce costs.

(2) 表面にNiめつき膜を有するリードフレーム
に対するアルミニウムワイヤの接合強度は、前
記Niめつき膜の表面あらさが小さいほど大き
くなること。特に、Niめつき膜の表面あらさ
が0.5μｍ以下の場合には、十分な接合強度が
得られること。(2) The bonding strength of an aluminum wire to a lead frame having a Ni plating film on its surface increases as the surface roughness of the Ni plating film decreases. In particular, when the surface roughness of the Ni-plated film is 0.5 μm or less, sufficient bonding strength can be obtained.

(3) リードフレーム表面のNiめつき膜のあさ
は、電気的にめつきすることにより、小さくで
きること。(3) The thickness of the Ni plating film on the lead frame surface can be reduced by electrical plating.

以下に、本発明を詳細に説明する。 The present invention will be explained in detail below.

まず初めに、電気的にNiめつき膜を表面にめ
つきしたFe―Niリードフレームと、化学的にNi
めつき膜を表面にめつきしたFe―Niリードフレ
ームの表面のあらさを測定した。 First, a Fe-Ni lead frame with an electrically Ni-plated film on its surface and a chemically Ni-plated lead frame were prepared.
The surface roughness of a Fe-Ni lead frame with a plating film plated on the surface was measured.

この場合の表面あらさの測定方法は、Niめつ
き膜を20000倍に拡大し、ボンデイング時のアル
ミニウムワイヤのつぶれ幅にほぼ合わせた50μｍ
間を１サンプル区間とし、その区間内での凹凸の
最大値を表面あらさの値とした。同様の測定を30
サンプル区間について行なつた。第１図にその測
定結果の分布範囲を示す。 The method for measuring the surface roughness in this case is to magnify the Ni plating film 20,000 times and measure it to 50 μm, which is approximately the same width as the collapse width of the aluminum wire during bonding.
The interval was defined as one sample section, and the maximum value of the unevenness within that section was taken as the value of surface roughness. 30 similar measurements
This was done for the sample section. Figure 1 shows the distribution range of the measurement results.

化学的にNiめつきしたリードフレームのあら
さは、同図Ｃに示すように、0.5〜0.8μｍと大き
い。一方、電気的にめつきしたNiめつき膜は、
同図Ｅに示すように、0.1〜0.3μｍと非常に小さ
かつた。また、電気的にNiめつきを施こしたリ
ードフレームは化学的にめつきしたものに比べ、
あらさにばらつきが少ないことが確認された。 The roughness of the chemically Ni-plated lead frame is as large as 0.5 to 0.8 μm, as shown in Figure C. On the other hand, the electrically plated Ni-plated film is
As shown in Figure E, it was very small at 0.1 to 0.3 μm. In addition, electrically Ni-plated lead frames are more effective than chemically plated lead frames.
It was confirmed that there was little variation in roughness.

第２図、直径30μｍのアルミニウムワイヤを、
あらさの異なるNiめつき膜に、そのつぶれ幅を
同一にしてボンデイングした後の、接合部のせん
断強度を測定した結果である。 Figure 2: An aluminum wire with a diameter of 30 μm,
These are the results of measuring the shear strength of the joint after bonding Ni-plated films with different roughness with the same collapse width.

これから、Niめつき膜のあらさが0.5μｍ以下
の範囲では、せん断強度は23ｇのほゞ一定値を示
すが、0.5μｍ以上のあらさになると、せん断強
度が急激に減少することが知られる。 From this, it is known that when the roughness of the Ni-plated film is 0.5 μm or less, the shear strength shows a nearly constant value of 23 g, but when the roughness becomes 0.5 μm or more, the shear strength decreases rapidly.

第２図の測定結果から、アルミニウムワイヤボ
ンデイングにおいて、Niめつき膜との強固な接
合強度が得られるNiめつき膜のあらさは、0.5μ
ｍ以下が適していることが確認された。 From the measurement results shown in Figure 2, the roughness of the Ni plating film that provides strong bonding strength with the Ni plating film in aluminum wire bonding is 0.5μ.
It was confirmed that less than m is suitable.

第３図に、Niめつき膜のあらさと、アルミニ
ウムワイヤボンデイング時のアルミニウムワイヤ
のNiめつき膜への接合率との関係を示す。 FIG. 3 shows the relationship between the roughness of the Ni plating film and the bonding rate of the aluminum wire to the Ni plating film during aluminum wire bonding.

ここでいう接合とは、ボンデイング後のアルミ
ニウムワイヤが、ほぼ０の力で引剥がされない状
態をさしている。 Bonding here refers to a state in which the aluminum wire after bonding is not peeled off with almost zero force.

この測定結果から、Niめつき膜表面のあらさ
が0.5μｍ以下では、接合率は100％を示すが、
0.5μｍ以上のあらさのNiめつき膜では接合率が
低下することが確認された。すなわち、例えば
0.6μｍのあらさのNiめつき膜に対する接合率は
80％、0.8μｍのあらさのNiめつき膜に対する接
合率は40％というように、Niめつき膜の表面が
あらくなるほど、接合率は低下する。 From this measurement result, the bonding rate shows 100% when the roughness of the Ni-plated film surface is 0.5 μm or less, but
It was confirmed that the bonding rate decreased in Ni-plated films with a roughness of 0.5 μm or more. That is, for example
The bonding rate for Ni-plated film with a roughness of 0.6μm is
The bonding rate for a Ni-plated film with a roughness of 80% and 0.8 μm is 40%, and as the surface of the Ni-plated film becomes rougher, the bonding rate decreases.

第２図に関して前述したようにアルミニウムワ
イヤボンデイングにおいてNiめつき膜のあらさ
の違いによりせん断強度に差が認められた。これ
はアルミニウムワイヤとNiめつき膜の接合部の
面積に関係していると考えられる。この場合、ワ
イヤのつぶれ幅は同一にしているので、見掛けの
接合面積は同じであるが、真に接合している面積
に違いがあると考えられる。 As described above with reference to FIG. 2, differences in shear strength were observed in aluminum wire bonding due to differences in the roughness of the Ni plating film. This is thought to be related to the area of the joint between the aluminum wire and the Ni plating film. In this case, since the collapsed width of the wires is the same, the apparent bonded area is the same, but it is thought that there is a difference in the true bonded area.

このことを確認するために、あらさ0.2，0.5及
び0.6μｍのNiめつき膜に、つぶれ幅を一定にし
てアルミニウムワイヤをボンデイングしたとき
の、接合部の真の接合面積を、見掛けの接合面積
との比で示したのが第４図である。 To confirm this, we calculated the true bonding area and the apparent bonding area when aluminum wire was bonded to Ni-plated films with roughnesses of 0.2, 0.5, and 0.6 μm with a constant collapse width. Figure 4 shows the ratio.

0.2及び0.5μｍあらさの場合の、見掛けの接合
面積に対する真の接合面積の比は、いずれも0.8
〜1.0を示し、真の接合面積が大きいことが認め
られた。しかし、あらさが0.6μｍのNiめつき膜
の場合は0.5〜0.8を示し、真の接合面積が小さい
ことが認められた。 The ratio of the true bonding area to the apparent bonding area is 0.8 for both 0.2 and 0.5μm roughness.
~1.0, and it was recognized that the true bonding area was large. However, in the case of a Ni-plated film with a roughness of 0.6 μm, the roughness was 0.5 to 0.8, indicating that the true bonding area was small.

リードフレームの表面は、シリコンペレツトを
ハンダ付けする時に、150〜250℃で、数分間大気
中で加熱されるため酸化される。そのため、酸化
されたNiめつき膜とアルミニウムワイヤボンデ
イングした場合の接合部のせん断強度を検討し
た。 When soldering silicon pellets, the surface of the lead frame is heated in the air at 150-250°C for several minutes, so it becomes oxidized. Therefore, we investigated the shear strength of the joint between an oxidized Ni plating film and aluminum wire bonding.

第５図は、あらさの異なるNiめつき膜リード
フレームを、250℃の大気中で１時間加熱した
後、その表面にアルミニウムワイヤをボンデイン
グして、接合部のせん断強度を求めた結果であ
る。 FIG. 5 shows the results of determining the shear strength of the bonded portions of Ni-plated film lead frames with different roughnesses heated in the atmosphere at 250° C. for 1 hour and bonded with aluminum wires to the surfaces thereof.

この結果から、Niめつき膜のあらさが0.5μｍ
以下では、せん断強度が23ｇのほゞ一定値を示す
が、0.5μｍ以上のあらさになると急激に低下
し、0.6μｍのあらさでは、わずか５ｇにまで低
下したことがわかる。このことから、熱酸化した
Niめつき膜でも、ワイヤボンデイングにおいて
あらさが0.5μｍ以下であれば、強固な接合部を
もつたワイヤボンデイングが得られることが確認
された。 From this result, the roughness of the Ni-plated film is 0.5 μm.
It can be seen below that the shear strength shows a nearly constant value of 23 g, but it rapidly decreases when the roughness is 0.5 μm or more, and it decreases to only 5 g when the roughness is 0.6 μm. From this, thermal oxidation
It was confirmed that even with a Ni-plated film, wire bonding with a strong bond can be obtained if the roughness is 0.5 μm or less in wire bonding.

半導体装置は、製品として稼動中に、室温以上
の温度に長時間加熱され、アルミニウムワイヤと
の接合部が劣化し剥離し易くなる。 When a semiconductor device is in operation as a product, it is heated to a temperature higher than room temperature for a long period of time, and the bonded portion with the aluminum wire deteriorates and easily peels off.

そこで、接合部の経時劣化をあらさ0.2，0.5及
び0.6μｍのNiめつき膜について、試験温度200℃
で検討した結果を、第６図に示す。同図におい
て、黒丸、白丸、四角の各印は、それぞれNiめ
つき膜のあらさが0.2μｍ，0.5μｍ，0.6μｍの場
合の測定値を示している。 Therefore, we tested Ni-plated films of 0.2, 0.5, and 0.6 μm at a test temperature of 200°C to prevent aging deterioration of the joints.
The results of the study are shown in Figure 6. In the figure, the black circles, white circles, and squares indicate measured values when the roughness of the Ni-plated film is 0.2 μm, 0.5 μm, and 0.6 μm, respectively.

第６図の曲線イで示すように、Niめつき膜の
あらさが0.2及び0.5μｍの接合部の劣化は、1000
時間後でも生じない。しかし、同図の曲線ロで示
すように、0.6μｍのあらさの場合は、500時間
で、せん断強度が13ｇに低下し、以下時間の経過
と共に減少した。 As shown by curve A in Figure 6, the deterioration of the joints with Ni-plated films with roughness of 0.2 and 0.5 μm is 1000 μm.
It does not occur even after hours. However, as shown by curve B in the same figure, in the case of a roughness of 0.6 μm, the shear strength decreased to 13 g after 500 hours, and then decreased with the passage of time.

このことから、接合部の経時劣化についても、
Niめつき膜のあらさを0.5μｍ以下にした方が良
いことが確認された。 From this, regarding aging deterioration of joints,
It was confirmed that it is better to reduce the roughness of the Ni plating film to 0.5 μm or less.

以上の各測定結果から明らかなように、アルミ
ニウムワイヤを、表面にNiめつき膜を有するリ
ードフレームにボンデイングする場合は、Niめ
つき膜の表面あらさを0.5μｍ以下にする必要が
ある。この場合、Niめつき膜の表面あらさは、
前記膜中に含まれる燐や光沢剤の割合が多いほ
ど、小さくできることが知られている。 As is clear from the above measurement results, when bonding an aluminum wire to a lead frame having a Ni plating film on its surface, the surface roughness of the Ni plating film needs to be 0.5 μm or less. In this case, the surface roughness of the Ni-plated film is
It is known that the larger the proportion of phosphorus and brighteners contained in the film, the smaller it can be.

第７図は、本発明の半導体装置の一実施例の断
面図である。図において、１はアルミニウム（合
金）ボンデイングワイヤ、２はリードフレーム７
の表面に形成されたNiめつき膜である。前記Ni
めつき膜は、本実施例では、電気メツキによつて
形成され、その表面あらさは0.5μｍ以下になる
ように制御されている。 FIG. 7 is a sectional view of one embodiment of the semiconductor device of the present invention. In the figure, 1 is an aluminum (alloy) bonding wire, 2 is a lead frame 7
This is a Ni-plated film formed on the surface of. Said Ni
In this example, the plating film is formed by electroplating, and its surface roughness is controlled to be 0.5 μm or less.

３は半導体ペレツト、５はアルミニウム電極、
６は半導体ペレツト３をリードフレーム７上に固
着するためのはんだ層であり、４はアルミニウム
ワイヤ１、半導体ペレツト３、Niめつき膜２を
有するリードフレーム７等を一体的に被覆保護す
るモールド・レジンである。 3 is a semiconductor pellet, 5 is an aluminum electrode,
6 is a solder layer for fixing the semiconductor pellet 3 on the lead frame 7, and 4 is a mold for integrally covering and protecting the lead frame 7 and the like having the aluminum wire 1, the semiconductor pellet 3, the Ni plating film 2, etc. It is resin.

この発明によれば、Niめつき膜２のあらさが
0.5μｍ以下に調整されているので、アルミニウ
ムワイヤ１とNiめつき膜２およびリードフレー
ム７との接合が強固にでき、又経年変化等による
劣化も極めて小さくして、十分に高い信頼性を得
ることができる。 According to this invention, the roughness of the Ni plating film 2 is
Since the thickness is adjusted to 0.5 μm or less, the bonding between the aluminum wire 1, Ni plating film 2, and lead frame 7 can be made strong, and deterioration due to changes over time can be minimized to achieve sufficiently high reliability. be able to.

なお、本発明がトランジスタ、サイリスタ等の
あらゆる半導体装置や集積化半導体装置に適用で
きることは、容易に理解されるであろう。 It will be easily understood that the present invention is applicable to all semiconductor devices and integrated semiconductor devices such as transistors and thyristors.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は電気的並びに化学的にめつきしたNi
めつき膜のあらさを測定した結果を示す図、第２
図はNiめつき膜のあらさと、前記Niめつき膜に
接合されたアルミニウムワイヤのせん断強度との
関係を示す図、第３図はNiめつき膜のあらさと
前記Niめつき膜に対するアルミニウムワイヤの
接合率との関係を示す図、第４図はNiめつき膜
のあらさと前記Niめつき膜に対するアルミニウ
ムワイヤの接合面積との関係を示す図、第５図は
熱酸化したNiめつき膜のあらさと前記Niめつき
膜に接合されたアルミニウムワイヤの接合部のせ
ん断強度との関係を示す図、第６図はアルミニウ
ムワイヤをボンデイングした後の、Niめつき膜
のあらさと接合部の経時劣化との関係を示す図、
第７図は本発明の半導体装置の一実施例の断面図
である。 １……アルミニウム（合金）ボンデイングワイ
ヤ、２……Niめつき膜、３……半導体ペレツ
ト、４……モールド・レジン、７……リードフレ
ーム。 Figure 1 shows electrically and chemically plated Ni.
Figure 2 showing the results of measuring the roughness of the plating film.
The figure shows the relationship between the roughness of the Ni-plated film and the shear strength of the aluminum wire bonded to the Ni-plated film. Figure 3 shows the relationship between the roughness of the Ni-plated film and the aluminum wire bonded to the Ni-plated film. Figure 4 shows the relationship between the roughness of the Ni-plated film and the bonding area of the aluminum wire to the Ni-plated film, and Figure 5 shows the relationship between the roughness of the Ni-plated film and the bonding area of the aluminum wire to the Ni-plated film. Figure 6 shows the relationship between the roughness of the Ni-plated film and the shear strength of the bonded portion of the aluminum wire bonded to the Ni-plated film. A diagram showing the relationship with deterioration,
FIG. 7 is a sectional view of one embodiment of the semiconductor device of the present invention. 1... Aluminum (alloy) bonding wire, 2... Ni plating film, 3... semiconductor pellet, 4... mold resin, 7... lead frame.

Claims (1)

【特許請求の範囲】 １ 半導体チツプをリードフレーム上に固着し、
かつ半導体チツプ素子上の電極とリードフレーム
とをアルミニウムワイヤにて接続した半導体装置
において、上記リードフレームはNiめつき膜で
おおわれており、前記Niめつき膜は、その表面
あらさが0.5μｍ以下であることを特徴とする半
導体装置。 ２ Niめつき膜は、電気的めつき膜であること
を特徴とする特許請求の範囲第１項記載の半導体
装置。[Claims] 1. A semiconductor chip is fixed on a lead frame,
In a semiconductor device in which an electrode on a semiconductor chip element and a lead frame are connected by an aluminum wire, the lead frame is covered with a Ni plating film, and the Ni plating film has a surface roughness of 0.5 μm or less. A semiconductor device characterized by the following. 2. The semiconductor device according to claim 1, wherein the Ni plating film is an electrically plating film.
JP56134026A 1981-08-28 1981-08-28 Semiconductor device Granted JPS5835950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56134026A JPS5835950A (en) 1981-08-28 1981-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56134026A JPS5835950A (en) 1981-08-28 1981-08-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5835950A JPS5835950A (en) 1983-03-02
JPS6257257B2 true JPS6257257B2 (en) 1987-11-30

Family

ID=15118634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56134026A Granted JPS5835950A (en) 1981-08-28 1981-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5835950A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6412563A (en) * 1987-07-07 1989-01-17 Sumitomo Metal Mining Co Nickel plating of lead frame
US5277356A (en) * 1992-06-17 1994-01-11 Rohm Co., Ltd. Wire bonding method
JP5603600B2 (en) 2010-01-13 2014-10-08 新光電気工業株式会社 WIRING BOARD, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR PACKAGE

Also Published As

Publication number Publication date
JPS5835950A (en) 1983-03-02

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