JP3426004B2 - Manufacturing method of magnetoelectric conversion element - Google Patents
Manufacturing method of magnetoelectric conversion elementInfo
- Publication number
- JP3426004B2 JP3426004B2 JP25839193A JP25839193A JP3426004B2 JP 3426004 B2 JP3426004 B2 JP 3426004B2 JP 25839193 A JP25839193 A JP 25839193A JP 25839193 A JP25839193 A JP 25839193A JP 3426004 B2 JP3426004 B2 JP 3426004B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- lead frame
- magnetic body
- conversion element
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000008188 pellet Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 239000000696 magnetic material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- WJZHMLNIAZSFDO-UHFFFAOYSA-N manganese zinc Chemical compound [Mn].[Zn] WJZHMLNIAZSFDO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Measuring Magnetic Variables (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Hall/Mr Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子、特に磁電
変換素子の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, particularly a magnetoelectric conversion device.
【０００２】[0002]
【従来の技術】従来より、ホール素子等の磁電変換素子
は、電磁気特性、特に出力電圧を高くする目的で磁性
体、半導体および磁気集束用磁性体の積層構造（例えば
特公昭５１−４５２３４号公報）をとっている。一般
に、出力電圧は、半導体の電磁気特性が同じ素子であっ
ても磁気集束用磁性体の面積に反比例し、厚みにほぼ比
例する特性がある。2. Description of the Related Art Conventionally, a magnetoelectric conversion element such as a Hall element has a laminated structure of a magnetic material, a semiconductor and a magnetic material for magnetic focusing for the purpose of increasing electromagnetic characteristics, particularly output voltage (for example, Japanese Patent Publication No. 51-45234). ) Is taken. In general, the output voltage has characteristics that it is inversely proportional to the area of the magnetic body for magnetic focusing even if the semiconductors have the same electromagnetic characteristics and is almost proportional to the thickness.
【０００３】そこで、従来は磁性体と半導体の積層構造
のウェハ単位で電磁気特性を数点測定し、その測定され
た電磁気特性により所定の出力電圧を得るために、ある
同じ形状の磁気集束用磁性体をウェハ単位で載せるよう
にしていた。Therefore, conventionally, in order to obtain a predetermined output voltage based on the measured electromagnetic characteristics, several electromagnetic characteristics are measured on a wafer-by-wafer basis of a laminated structure of a magnetic body and a semiconductor. The body was placed on a wafer-by-wafer basis.
【０００４】しかしながら、半導体の電磁気特性にはウ
ェハ単位で分布があり、ばらつきがある。このばらつき
のある半導体上に同じ形状の磁気集束用磁性体を載せて
素子化した場合でも、その素子の出力電圧には当然のこ
とながら同じようにばらつきが発生する。そのために素
子化後の電磁気検査で所定範囲外の電磁気特性を示すも
のが発生してしまい、所定範囲内のものと外のものとで
区別処理する必要がある。However, the electromagnetic characteristics of semiconductors have a distribution on a wafer-by-wafer basis and vary. Even when a magnetic focusing magnetic body having the same shape is placed on a semiconductor having this variation to form an element, the output voltage of the element naturally has the same variation. Therefore, in the electromagnetic inspection after device formation, there are some that show electromagnetic characteristics outside the predetermined range, and it is necessary to distinguish between those within the predetermined range and those outside.
【０００５】本発明者らは、上記問題を解決するために
検討を重ねた結果、リードフレーム上にダイボンドされ
たペレットを個別に電磁気特性を測定し、該測定された
特性に相当する大きさの磁気集束用磁性体を上記測定対
象のペレット上に個別に載せることにより、素子化後の
電磁気特性において、ばらつきの小さい、所定の特性範
囲を有する磁電変換素子の製造方法を実現できることを
見いだし、本発明を完成させるに至った。[0005] The present inventors have made extensive studies to solve the above problems, the die bonding pellets on a lead frame was measured individually electromagnetic properties, of size corresponding to the measured characteristic By individually placing the magnetic body for magnetic focusing on the pellet to be measured, it was found that in the electromagnetic characteristics after element formation, a method of manufacturing a magnetoelectric conversion element having a small variation and a predetermined characteristic range can be realized. The invention was completed.
【０００６】[0006]
【発明が解決しようとする課題】本発明は上記問題を解
決するもので、素子化後に、電磁気特性のばらつきが小
さく、所定範囲の電磁気特性を有する磁電変換素子の製
造方法を提供することを目的とするものである。SUMMARY OF THE INVENTION The present invention solves the above problems, and an object of the present invention is to provide a method of manufacturing a magnetoelectric conversion element having a small range of variation in electromagnetic characteristics after device formation and having electromagnetic characteristics in a predetermined range. It is what
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、請求項１記載の発明は、磁性体、半導体および磁気
集束用磁性体の積層構造を有する磁電変換素子の製造方
法であって、リードフレーム上に予めダイボンドされた
磁性体および半導体からなる積層構造のペレットの出力
電圧を個別に測定する工程と、前記測定された出力電圧
から目的の特性値を得るために載せるべき磁気集束用磁
性体の面積又は厚さを選定し、前記ペレット上に前記選
定された磁気集束用磁性体を載置する工程を含むことを
特徴とする。To achieve the above object, the invention according to claim 1 is a method of manufacturing a magnetoelectric conversion element having a laminated structure of a magnetic body, a semiconductor, and a magnetic body for magnetic focusing. A step of individually measuring the output voltage of a pellet having a laminated structure composed of a magnetic body and a semiconductor die-bonded in advance on a lead frame, and a magnetic focusing magnetism to be mounted in order to obtain a target characteristic value from the measured output voltage. The method is characterized by including the step of selecting the area or thickness of the body and placing the selected magnetic body for magnetic focusing on the pellet.
【０００８】請求項１において、載せるべき磁気集束用
磁性体の面積又は厚さを示すマークを前記リードフレー
ムの外縁部に設ける工程をさらに含むようにしてもよ
い。In the first aspect, the method may further include a step of providing a mark indicating an area or a thickness of the magnetic body for magnetic focusing to be placed on the outer edge portion of the lead frame.
【０００９】[0009]
【実施例】以下、図面を参照して本発明の磁電変換素子
の製造方法の実施例を説明する。Embodiments of the method for manufacturing a magnetoelectric conversion element of the present invention will be described below with reference to the drawings.
【００１０】まず、磁電変換素子のペレットの構造を図
面を参照して説明する。図１はペレットの構造を示す図
である。図１において１はフェライト等の磁性体、２は
ＩｎＳｂ等の半導体、３はＭｎＺｎ等の磁気集束用磁性
体である。磁性体１と半導体２とはペレット４を構成し
ている。半導体２は感磁部と入力２端子出力２端子で構
成されている。電磁気特性の測定項目は、入出力端子の
抵抗と入力端子に一定の直流電圧を供給して感磁部に一
定の磁界をかけた場合とかけない場合の出力電圧であ
る。First, the structure of the pellet of the magnetoelectric conversion element will be described with reference to the drawings. FIG. 1 is a diagram showing the structure of a pellet. In FIG. 1, 1 is a magnetic material such as ferrite, 2 is a semiconductor such as InSb, and 3 is a magnetic focusing magnetic material such as MnZn. The magnetic body 1 and the semiconductor 2 form a pellet 4. The semiconductor 2 is composed of a magnetic sensing section and two input terminals and two output terminals. The measurement items of the electromagnetic characteristics are the resistance of the input / output terminal and the output voltage with and without applying a constant magnetic field to the magnetic sensitive part by supplying a constant DC voltage to the input terminal.
【００１１】リードフレームは図２（ａ）〜（ｄ）に示
すように半導体ペレットを搭載するアイランド部５と外
部端子となるリード部６とそれらを固定する部分（図示
略）からなっている。リードフレームの表面には全面あ
るいは部分的にメッキが施されている。As shown in FIGS. 2 (a) to 2 (d), the lead frame is composed of an island portion 5 on which a semiconductor pellet is mounted, a lead portion 6 serving as an external terminal, and a portion (not shown) for fixing them. The surface of the lead frame is entirely or partially plated.
【００１２】磁気集束用磁性体３の形状により、電磁気
特性、特に出力電圧がどの程度高くなるかを知るために
は、予めリードフレーム上にダイボンドされたペレット
について、電磁気特性を測定し、数種類の形状の磁気集
束用磁性体を準備し、その磁気集束用磁性体を載せて素
子化した後、電磁気特性を測定し磁気集束用磁性体の形
状と電磁気特性との相関を調べる。この相関から、ペレ
ットの有する電磁気特性に対して所定の電磁気特性を得
るためにどの形状の磁気集束用磁性体を載せれば良いか
が決定される。磁気集束用磁性体は面積を一定にし厚み
を変えて準備されており、厚みが厚い程、素子の出力電
圧が高くなる。In order to know how much the electromagnetic characteristics, especially the output voltage, increases depending on the shape of the magnetic body 3 for magnetic focusing, the electromagnetic characteristics of the pellets die-bonded on the lead frame in advance are measured and several kinds of electromagnetic characteristics are measured. A magnetic focusing magnetic material having a shape is prepared, and the magnetic focusing magnetic material is placed to form an element, and then the electromagnetic characteristics are measured to examine the correlation between the shape of the magnetic focusing magnetic material and the electromagnetic characteristics. From this correlation, it is determined which shape of the magnetic body for magnetic focusing should be placed to obtain a predetermined electromagnetic characteristic with respect to the electromagnetic characteristic of the pellet. The magnetic body for magnetic focusing is prepared by keeping the area constant and changing the thickness. The thicker the thickness, the higher the output voltage of the element.
【００１３】次に、本発明の磁電変換素子の製造方法の
一実施例を図２をもって説明する。図２（ａ），
（ｂ），（ｃ）および（ｄ）は本発明の実施をするため
の工程図であって、（ａ）はリードフレームアイランド
部５上にペレット４をダイボンドした状態を示す図であ
る。図２（ａ）において、６はリードフレームリード部
である。図２（ｂ）はリードフレームの外縁部に検出パ
ターンマーク７を設けた状態を示す図である。図２
（ｃ）はペレット４の半導体２とリードフレームリード
部６とをワイヤ８で結線した状態を示す図である。図２
（ｄ）はペレット４上に磁気集束用磁性体３を載せた状
態を示す図である。Next, an embodiment of the method for manufacturing the magnetoelectric conversion element of the present invention will be described with reference to FIG. 2 (a),
(B), (c) and (d) are process diagrams for carrying out the present invention, and (a) is a diagram showing a state in which the pellet 4 is die-bonded onto the lead frame island portion 5. In FIG. 2A, 6 is a lead frame lead portion. FIG. 2B is a view showing a state in which the detection pattern mark 7 is provided on the outer edge portion of the lead frame. Figure 2
(C) is a diagram showing a state in which the semiconductor 2 of the pellet 4 and the lead frame lead portion 6 are connected by a wire 8. Figure 2
FIG. 3D is a view showing a state in which the magnetic body 3 for magnetic focusing is placed on the pellet 4.
【００１４】以上のように構成された工程による製造方
法について以下その動作を説明する。The operation of the manufacturing method having the above-described steps will be described below.
【００１５】まず始めに図２（ａ）に示すようにペレッ
ト４をリードフレームアイランド部５上にダイボンドし
接着固定する。この工程は一般にダイボンダーとして知
られる装置を利用できる。すなわち、リードフレームの
アイランド部に予め接着剤を種々の方法で塗布してお
き、その上にペレットを載せる。さらにオーブン等に入
れて接着剤を硬化し、ペレットとリードフレームを一体
化するものである。First, as shown in FIG. 2A, the pellet 4 is die-bonded onto the lead frame island portion 5 and fixed by adhesion. This process can utilize a device commonly known as a die bonder. That is, an adhesive is applied in advance to the island portion of the lead frame by various methods, and pellets are placed thereon. Further, it is placed in an oven or the like to cure the adhesive and integrate the pellet and the lead frame.
【００１６】次に、リードフレーム上にダイボンドされ
たペレット４の電磁気特性を個別に測定する。この工程
は、ペレットの四隅には入出力端子が形成されている
が、プローブ等を該入出力端子に接触させ入力電圧を印
加し、有磁界時と無磁界時の出力電圧を測定するもので
ある。その特性値から目的の特性値を得るために載せる
べき磁気集束用磁性体の大きさを選定することができ
る。次にその形状に相当する特性パターン検出マークを
リードフレームの外縁部に設ける。例えば図２（ｂ）に
示すような記号でもよいし、位置の違いを利用してもよ
い。マーキングは単なるマジックペンで行ってもよい
し、レーザーやインクジェットのような手段を用いるこ
ともできる。図２（ｃ）に示すようにマークされたリー
ドフレームはワイヤーボンドを行い、ペレットの端子と
リードフレームのリード部を結線する。この工程には一
般にワイヤーボンダーとして知られる装置を利用でき
る。すなわち、入出力端子側とリードフレームのリード
部を超音波と熱を利用して、ワイヤーの両端をそれぞれ
圧着し結線する。ワイヤーボンドされたリードフレーム
に設けられた検出マークを個別に検出し、検出マークに
相当する磁気集束用磁性体の大きさを選定し、図２
（ｄ）に示すように磁気集束用磁性定を予め接着剤を塗
布したペレットの中央部に載せて接着し、オーブン等で
硬化する。この際、ワイヤーボンドと磁気集束用磁性体
の積載の工程順を逆にしてもよい。Next, the electromagnetic characteristics of the pellets 4 die-bonded on the lead frame are individually measured. In this step, the input / output terminals are formed at the four corners of the pellet, but the input voltage is applied by bringing a probe into contact with the input / output terminals, and the output voltage is measured with and without a magnetic field. is there. It is possible to select the size of the magnetic body for magnetic focusing to be mounted in order to obtain the desired characteristic value from the characteristic value. Next, a characteristic pattern detection mark corresponding to the shape is provided on the outer edge of the lead frame. For example, a symbol as shown in FIG. 2B may be used, or a difference in position may be used. The marking may be performed with a simple magic pen, or a means such as laser or ink jet can be used. The lead frame marked as shown in FIG. 2C is wire-bonded to connect the pellet terminals and the lead frame lead portions. A device generally known as a wire bonder can be used for this step. That is, both ends of the wire are crimped and connected to the input / output terminal side and the lead portion of the lead frame using ultrasonic waves and heat. The detection mark provided on the wire-bonded lead frame is individually detected, and the size of the magnetic body for magnetic focusing corresponding to the detection mark is selected.
As shown in (d), the magnetic focusing magnetic constant is placed on the center of the pellet coated with the adhesive in advance and bonded, and then cured in an oven or the like. At this time, the steps of wire bonding and loading of the magnetic body for magnetic focusing may be reversed.
【００１７】＜実験例＞表面を絶縁処理した５５ｍｍ角
の厚さ０．３ｍｍフェライト基板上に、電子移動度２５
０００ｃｍ2 ／Ｖ・Ｓの特性（ファン・デル・パウ法で
測定）のＩｎＳｂ（インジウムアンチモン）の半導体を
形成する。次に、ウエット処理でパターニングして得た
ホール素子ウェハを０．８ｍｍ角のペレットに加工す
る。このペレットを、厚み０．１ｍｍ、１ｍｍ×１．２
ｍｍの大きさのアイランドを４．６ｍｍピッチで２０個
並べた大きさ１５ｍｍ×９２ｍｍのリードフレーム上に
ダイボンドし、マガジンに収納し硬化する。電磁気特性
検査機でペレット個別に入出力抵抗を測定し、入力端子
に１Ｖの直流電圧を印加し、有磁界、無磁界の出力電圧
を測定する。予め所定の出力電圧を指定し、その値か
ら、所定の出力電圧を得るために、どの形状の磁気集束
用磁性体を選定するかを計算機で計算させ出力する。磁
気集束用磁性体はＭｎＺｎ（マンガンジンク）の４５ｍ
ｍ角の基板を厚み０．２ｍｍ、０．２５ｍｍ、０．３ｍ
ｍおよび０．４ｍｍの４種類準備し、０．４ｍｍ角に切
断したものである。出力された磁気集束用磁性体の厚み
のマークをリードフレームの外縁部にペレット毎にイン
キでマークする。マークの種類は磁気集束用磁性体の形
状の種類と同じく４種である。マークされたリードフレ
ームは１度マガジンに収納し、ワイヤーボンディング装
置にて入出力端子とリードフレームを金線で結線する。
結線されたリードフレームはディスペンス方式でシリコ
ーン樹脂（東芝シリコーン製ＴＳＪ３１５８−Ｂ）をペ
レット中央部に塗布し、リードフレームの外縁部に設け
たマークに合わせて磁気集束用磁性体をピンセットを利
用し搭載する。磁気集束用磁性体を個別に搭載されたリ
ードフレームをマガジンに収納し、オーブンで硬化す
る。このリードフレームを樹脂封止し素子化する。<Experimental Example> An electron mobility of 25 is provided on a 55 mm square, 0.3 mm thick ferrite substrate whose surface is insulated.
A semiconductor of InSb (indium antimony) having a characteristic of 000 cm 2 / V · S (measured by the van der Pauw method) is formed. Next, the Hall element wafer obtained by patterning by the wet process is processed into pellets of 0.8 mm square. This pellet is 0.1 mm thick, 1 mm x 1.2
20 mm islands are arranged at a 4.6 mm pitch and die-bonded onto a lead frame having a size of 15 mm × 92 mm, housed in a magazine and cured. The input / output resistance of each pellet is measured with an electromagnetic characteristic tester, a DC voltage of 1 V is applied to the input terminal, and the magnetic field and non-magnetic field output voltage is measured. A predetermined output voltage is designated in advance, and from this value, a computer calculates and outputs which shape of the magnetic focusing magnetic body is selected in order to obtain the predetermined output voltage. The magnetic material for magnetic focusing is 45 m of MnZn (manganese zinc).
0.2mm, 0.25mm, 0.3m thickness for m-square substrate
Four types of m and 0.4 mm were prepared and cut into 0.4 mm square. The output mark of the thickness of the magnetic body for magnetic focusing is marked with ink on the outer edge of the lead frame for each pellet. There are four kinds of marks, which are the same as the shapes of the magnetic body for magnetic focusing. The marked lead frame is stored in the magazine once and the input / output terminal and the lead frame are connected with a gold wire by a wire bonding device.
The connected lead frame is coated with silicone resin (TSJ3158-B made by Toshiba Silicone) in the center of the pellet by the dispense method, and the magnetic material for magnetic focusing is mounted using tweezers in accordance with the mark provided on the outer edge of the lead frame. To do. A lead frame in which magnetic materials for magnetic focusing are individually mounted is housed in a magazine and cured in an oven. This lead frame is resin-sealed to form an element.
【００１８】こうして素子化されたホール素子は電磁気
検査にて図３（ａ）のような出力電圧分布を示し、所定
の出力電圧範囲に９割以上収まった。図３（ｂ）に従来
法で１枚のウェハ内のペレット全てに厚み０．２５ｍｍ
の磁気集束用磁性体を載せた場合の出力電圧特性分布図
を示す。目的の出力電圧に４〜５割しか収まらない。The Hall element thus made into an element showed an output voltage distribution as shown in FIG. 3 (a) by an electromagnetic test, and it was within 90% or more within a predetermined output voltage range. As shown in Fig. 3 (b), all the pellets in one wafer are 0.25 mm thick by the conventional method.
FIG. 7 is a distribution diagram of output voltage characteristic when the magnetic body for magnetic focusing is placed. Only 40 to 50% of the target output voltage can be accommodated.
【００１９】[0019]
【発明の効果】以上説明したように、本発明によれば、
得られた磁電変換素子の電磁気特性を所定範囲内に収ま
るように組み立てることが可能になり、要求される特性
を有する磁電変換素子を計画的に、かつ、効率よく生産
できる。As described above, according to the present invention,
It is possible to assemble so that the electromagnetic characteristics of the obtained magnetoelectric conversion element fall within a predetermined range, and it is possible to systematically and efficiently produce the magnetoelectric conversion element having the required characteristics.
【図１】一般的な磁電変換素子のペレットの構造を示す
断面図である。FIG. 1 is a cross-sectional view showing a structure of a pellet of a general magnetoelectric conversion element.
【図２】（ａ）〜（ｄ）は本発明の磁電変換素子の製造
方法の一実施例における各工程を示す図であって、
（ｂ）は平面図であり、（ａ），（ｃ）および（ｄ）は
断面図である。2 (a) to 2 (d) are views showing each step in one embodiment of the method for manufacturing a magnetoelectric conversion element of the present invention,
(B) is a plan view, (a), (c) and (d) are sectional views.
【図３】（ａ）は本発明の実施により得られた磁電変換
素子における出力電圧の分布を示す特性図であり、
（ｂ）は従来法により得られた磁電変換素子における出
力電圧の分布を示す特性図である。FIG. 3A is a characteristic diagram showing an output voltage distribution in a magnetoelectric conversion element obtained by carrying out the present invention,
(B) is a characteristic diagram showing the distribution of the output voltage in the magnetoelectric conversion element obtained by the conventional method.
１ 磁性体 ２ 半導体 ３ 磁気集束用磁性体 ４ ペレット ５ リードフレームアイランド部 ６ リードフレームリード部 ７ パターン検出用マーク ８ ワイヤ 1 magnetic material 2 semiconductors 3 Magnetic substance for magnetic focusing 4 pellets 5 Lead frame island 6 Lead frame lead part 7 Pattern detection mark 8 wires
───────────────────────────────────────────────────── フロントページの続き (72)発明者 福中 敏昭 宮崎県延岡市旭町６丁目4100番地 旭化 成電子株式会社内 (72)発明者 松居 雄毅 宮崎県延岡市旭町６丁目4100番地 旭化 成電子株式会社内 (56)参考文献 特開 平５−218528（ＪＰ，Ａ) 特開 平２−91590（ＪＰ，Ａ) 特開 平５−13481（ＪＰ，Ａ) 特開 昭62−260374（ＪＰ，Ａ) 特開 平５−234837（ＪＰ，Ａ) 特開 平２−134839（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 43/06 G01R 33/09 H01L 43/14 ＪＩＣＳＴファイル（ＪＯＩＳ)─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshiaki Fukunaka, 6-4100, Asahi-cho, Nobeoka-shi, Miyazaki Asahi Kasei Denshi Co., Ltd. (72) Inuki, Yuki Matsui 6-4100, Asahi-cho, Nobeoka-shi, Miyazaki Asahi Kasei Denshi Co., Ltd. (56) Reference JP 5-218528 (JP, A) JP 2-91590 (JP, A) JP 5-13481 (JP, A) JP 62- 260374 (JP, A) JP 5-234837 (JP, A) JP 2-134839 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 43/06 G01R 33 / 09 H01L 43/14 JISST file (JOIS)
Claims (2)
の積層構造を有する磁電変換素子の製造方法であって、 リードフレーム上に予めダイボンドされた磁性体および
半導体からなる積層構造のペレットの出力電圧を個別に
測定する工程と、 前記測定された出力電圧から目的の特性値を得るために
載せるべき磁気集束用磁性体の面積又は厚さを選定し、
前記ペレット上に前記選定された磁気集束用磁性体を載
置する工程を含むことを特徴とする磁電変換素子の製造
方法。1. A method of manufacturing a magnetoelectric conversion element having a laminated structure of a magnetic body, a semiconductor, and a magnetic body for magnetic focusing, comprising: outputting a pellet having a laminated structure composed of the magnetic body and the semiconductor die-bonded in advance on a lead frame. A step of individually measuring the voltage, and selecting the area or the thickness of the magnetic body for magnetic focusing to obtain the target characteristic value from the measured output voltage,
A method of manufacturing a magnetoelectric conversion element, comprising the step of placing the selected magnetic body for magnetic focusing on the pellet.
用磁性体の面積又は厚さを示すマークを前記リードフレ
ームの外縁部に設ける工程をさらに含むことを特徴とす
る請求項１に記載の磁電変換素子の製造方法。2. The magnetoelectric device according to claim 1, further comprising the step of providing a mark indicating an area or a thickness of the magnetic body for magnetic focusing to be mounted on an outer edge portion of the lead frame. Method for manufacturing conversion element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25839193A JP3426004B2 (en) | 1993-10-15 | 1993-10-15 | Manufacturing method of magnetoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25839193A JP3426004B2 (en) | 1993-10-15 | 1993-10-15 | Manufacturing method of magnetoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07115233A JPH07115233A (en) | 1995-05-02 |
| JP3426004B2 true JP3426004B2 (en) | 2003-07-14 |
Family
ID=17319592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25839193A Expired - Lifetime JP3426004B2 (en) | 1993-10-15 | 1993-10-15 | Manufacturing method of magnetoelectric conversion element |
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| Country | Link |
|---|---|
| JP (1) | JP3426004B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5793059B2 (en) * | 2011-10-31 | 2015-10-14 | 旭化成エレクトロニクス株式会社 | Magnetic sensor |
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1993
- 1993-10-15 JP JP25839193A patent/JP3426004B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07115233A (en) | 1995-05-02 |
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