JPS6255985A - 半導体発光素子 - Google Patents
半導体発光素子Info
- Publication number
- JPS6255985A JPS6255985A JP60197013A JP19701385A JPS6255985A JP S6255985 A JPS6255985 A JP S6255985A JP 60197013 A JP60197013 A JP 60197013A JP 19701385 A JP19701385 A JP 19701385A JP S6255985 A JPS6255985 A JP S6255985A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- type
- compound semiconductor
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 238000005253 cladding Methods 0.000 claims description 33
- 239000000203 mixture Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 15
- 239000013078 crystal Substances 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 21
- 230000010355 oscillation Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 241000282253 Dirades Species 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60197013A JPS6255985A (ja) | 1985-09-05 | 1985-09-05 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60197013A JPS6255985A (ja) | 1985-09-05 | 1985-09-05 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6255985A true JPS6255985A (ja) | 1987-03-11 |
| JPH0440872B2 JPH0440872B2 (enrdf_load_stackoverflow) | 1992-07-06 |
Family
ID=16367330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60197013A Granted JPS6255985A (ja) | 1985-09-05 | 1985-09-05 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6255985A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5012476A (en) * | 1987-06-02 | 1991-04-30 | Thomson-Csf | Device of semiconductor materials formed on a substrate having a different lattice parameter and application to a laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS574189A (en) * | 1980-06-10 | 1982-01-09 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
-
1985
- 1985-09-05 JP JP60197013A patent/JPS6255985A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS574189A (en) * | 1980-06-10 | 1982-01-09 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5012476A (en) * | 1987-06-02 | 1991-04-30 | Thomson-Csf | Device of semiconductor materials formed on a substrate having a different lattice parameter and application to a laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0440872B2 (enrdf_load_stackoverflow) | 1992-07-06 |
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