JPS625332B2 - - Google Patents
Info
- Publication number
- JPS625332B2 JPS625332B2 JP3537479A JP3537479A JPS625332B2 JP S625332 B2 JPS625332 B2 JP S625332B2 JP 3537479 A JP3537479 A JP 3537479A JP 3537479 A JP3537479 A JP 3537479A JP S625332 B2 JPS625332 B2 JP S625332B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- silicon
- pattern
- gas plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000006096 absorbing agent Substances 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 4
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 11
- 239000010931 gold Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3537479A JPS55127559A (en) | 1979-03-26 | 1979-03-26 | Blank mask for x-ray exposure and using method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3537479A JPS55127559A (en) | 1979-03-26 | 1979-03-26 | Blank mask for x-ray exposure and using method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55127559A JPS55127559A (en) | 1980-10-02 |
| JPS625332B2 true JPS625332B2 (US06650917-20031118-M00005.png) | 1987-02-04 |
Family
ID=12440118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3537479A Granted JPS55127559A (en) | 1979-03-26 | 1979-03-26 | Blank mask for x-ray exposure and using method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55127559A (US06650917-20031118-M00005.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56132343A (en) * | 1980-03-22 | 1981-10-16 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Mask for x-ray exposure and its manufacture |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5313879A (en) * | 1976-07-23 | 1978-02-07 | Nec Corp | Silicon mask for x-ray exposure and its production |
| JPS5321576A (en) * | 1976-08-11 | 1978-02-28 | Fujitsu Ltd | Mask for x-ray exposure |
| JPS53134367A (en) * | 1977-04-28 | 1978-11-22 | Toppan Printing Co Ltd | Xxray mask |
-
1979
- 1979-03-26 JP JP3537479A patent/JPS55127559A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5313879A (en) * | 1976-07-23 | 1978-02-07 | Nec Corp | Silicon mask for x-ray exposure and its production |
| JPS5321576A (en) * | 1976-08-11 | 1978-02-28 | Fujitsu Ltd | Mask for x-ray exposure |
| JPS53134367A (en) * | 1977-04-28 | 1978-11-22 | Toppan Printing Co Ltd | Xxray mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55127559A (en) | 1980-10-02 |
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