JPS6252458B2 - - Google Patents

Info

Publication number
JPS6252458B2
JPS6252458B2 JP58067155A JP6715583A JPS6252458B2 JP S6252458 B2 JPS6252458 B2 JP S6252458B2 JP 58067155 A JP58067155 A JP 58067155A JP 6715583 A JP6715583 A JP 6715583A JP S6252458 B2 JPS6252458 B2 JP S6252458B2
Authority
JP
Japan
Prior art keywords
layer
silicon
epitaxial
silicon oxide
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58067155A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58212148A (ja
Inventor
E Kooi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7002384.A external-priority patent/NL159817B/xx
Application filed by Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS58212148A publication Critical patent/JPS58212148A/ja
Publication of JPS6252458B2 publication Critical patent/JPS6252458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58067155A 1970-02-19 1983-04-18 集積半導体装置 Granted JPS58212148A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7002384 1970-02-19
NL7002384.A NL159817B (nl) 1966-10-05 1970-02-19 Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS58212148A JPS58212148A (ja) 1983-12-09
JPS6252458B2 true JPS6252458B2 (enExample) 1987-11-05

Family

ID=19809379

Family Applications (3)

Application Number Title Priority Date Filing Date
JP50141238A Pending JPS5176087A (enExample) 1970-02-19 1975-11-27
JP13535380A Granted JPS56153748A (en) 1970-02-19 1980-09-30 Integrated semiconductor device
JP58067155A Granted JPS58212148A (ja) 1970-02-19 1983-04-18 集積半導体装置

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP50141238A Pending JPS5176087A (enExample) 1970-02-19 1975-11-27
JP13535380A Granted JPS56153748A (en) 1970-02-19 1980-09-30 Integrated semiconductor device

Country Status (6)

Country Link
JP (3) JPS5176087A (enExample)
BE (1) BE763112R (enExample)
BR (1) BR7101089D0 (enExample)
CA (1) CA920281A (enExample)
ES (1) ES388379A2 (enExample)
IT (1) IT976361B (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels

Also Published As

Publication number Publication date
JPS56153748A (en) 1981-11-27
CA920281A (en) 1973-01-30
IT976361B (it) 1974-08-20
JPS5176087A (enExample) 1976-07-01
BE763112R (fr) 1971-08-17
ES388379A2 (es) 1973-06-01
BR7101089D0 (pt) 1973-02-27
JPS58212148A (ja) 1983-12-09
JPS5723419B2 (enExample) 1982-05-18

Similar Documents

Publication Publication Date Title
US3411051A (en) Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface
JPS62105467A (ja) キヤパシタ集積回路構造体
JPH1070281A (ja) 半導体装置およびその製造方法
JPS58139468A (ja) 半導体装置およびその製造方法
JPS6318673A (ja) 半導体装置の製法
JPS5937867B2 (ja) 半導体装置およびその製造方法
JPH0123949B2 (enExample)
US3758943A (en) Method for manufacturing semiconductor device
JP2605030B2 (ja) 直交バイポーラ−トランジスタ
GB2040568A (en) Semiconductor device connection conductors
JPH07114210B2 (ja) 半導体装置の製造方法
US4216491A (en) Semiconductor integrated circuit isolated through dielectric material
JPS6048111B2 (ja) 不揮発性半導体記憶装置
JPS6252458B2 (enExample)
US6054358A (en) Semiconductor device and manufacturing method of the same
JPS61172346A (ja) 半導体集積回路装置
JP2668528B2 (ja) 半導体装置の製造方法
JP2531680B2 (ja) 半導体装置およびその製造方法
JPH0590492A (ja) 半導体集積回路とその製造方法
JPS627704B2 (enExample)
JPS6244430B2 (enExample)
JP3186697B2 (ja) バイポーラトランジスタの製造方法
JPS6120141B2 (enExample)
JPS5984543A (ja) バイポ−ラ集積回路装置およびその製造方法
JPS58107645A (ja) 半導体装置の製法