JPS6250993B2 - - Google Patents
Info
- Publication number
- JPS6250993B2 JPS6250993B2 JP54135530A JP13553079A JPS6250993B2 JP S6250993 B2 JPS6250993 B2 JP S6250993B2 JP 54135530 A JP54135530 A JP 54135530A JP 13553079 A JP13553079 A JP 13553079A JP S6250993 B2 JPS6250993 B2 JP S6250993B2
- Authority
- JP
- Japan
- Prior art keywords
- insb
- thin film
- substrate
- semiconductor
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 40
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 10
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- -1 InSb metal compound Chemical class 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000005496 eutectics Effects 0.000 description 5
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13553079A JPS5660078A (en) | 1979-10-19 | 1979-10-19 | Magnetic reluctance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13553079A JPS5660078A (en) | 1979-10-19 | 1979-10-19 | Magnetic reluctance effect element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5660078A JPS5660078A (en) | 1981-05-23 |
| JPS6250993B2 true JPS6250993B2 (da) | 1987-10-28 |
Family
ID=15153917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13553079A Granted JPS5660078A (en) | 1979-10-19 | 1979-10-19 | Magnetic reluctance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5660078A (da) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS612137U (ja) * | 1985-05-27 | 1986-01-08 | 株式会社伊藤喜工作所 | 机の高低調節装置 |
| JP2000269567A (ja) | 1999-03-18 | 2000-09-29 | Tdk Corp | 半導体磁気抵抗素子 |
-
1979
- 1979-10-19 JP JP13553079A patent/JPS5660078A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5660078A (en) | 1981-05-23 |
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