JPS6249769B2 - - Google Patents
Info
- Publication number
- JPS6249769B2 JPS6249769B2 JP55011449A JP1144980A JPS6249769B2 JP S6249769 B2 JPS6249769 B2 JP S6249769B2 JP 55011449 A JP55011449 A JP 55011449A JP 1144980 A JP1144980 A JP 1144980A JP S6249769 B2 JPS6249769 B2 JP S6249769B2
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- channel mos
- channel
- capacitor
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Manipulation Of Pulses (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1144980A JPS56109040A (en) | 1980-02-04 | 1980-02-04 | Level conversion circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1144980A JPS56109040A (en) | 1980-02-04 | 1980-02-04 | Level conversion circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56109040A JPS56109040A (en) | 1981-08-29 |
| JPS6249769B2 true JPS6249769B2 (enrdf_load_stackoverflow) | 1987-10-21 |
Family
ID=11778396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1144980A Granted JPS56109040A (en) | 1980-02-04 | 1980-02-04 | Level conversion circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56109040A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0793557B2 (ja) * | 1988-11-17 | 1995-10-09 | 日本電気株式会社 | 半導体回路 |
-
1980
- 1980-02-04 JP JP1144980A patent/JPS56109040A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56109040A (en) | 1981-08-29 |
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