JPS6249631A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6249631A JPS6249631A JP6554286A JP6554286A JPS6249631A JP S6249631 A JPS6249631 A JP S6249631A JP 6554286 A JP6554286 A JP 6554286A JP 6554286 A JP6554286 A JP 6554286A JP S6249631 A JPS6249631 A JP S6249631A
- Authority
- JP
- Japan
- Prior art keywords
- atoms
- wafer
- oxygen concentration
- defects
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims abstract description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 40
- 239000001301 oxygen Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000005247 gettering Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 28
- 230000007547 defect Effects 0.000 abstract description 26
- 238000003860 storage Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 47
- 125000004429 atom Chemical group 0.000 description 32
- 239000002244 precipitate Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000011084 recovery Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 241000276457 Gadidae Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004854 X-ray topography Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6554286A JPS6249631A (ja) | 1986-03-24 | 1986-03-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6554286A JPS6249631A (ja) | 1986-03-24 | 1986-03-24 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3784486A Division JPS61198638A (ja) | 1986-02-22 | 1986-02-22 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6249631A true JPS6249631A (ja) | 1987-03-04 |
| JPH0351295B2 JPH0351295B2 (enrdf_load_stackoverflow) | 1991-08-06 |
Family
ID=13290006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6554286A Granted JPS6249631A (ja) | 1986-03-24 | 1986-03-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6249631A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02281290A (ja) * | 1989-03-31 | 1990-11-16 | Samsung Electron Devices Co Ltd | プラズマデイスプレーパネルのスキャンライン駆動分離回路及び分離方法 |
-
1986
- 1986-03-24 JP JP6554286A patent/JPS6249631A/ja active Granted
Non-Patent Citations (2)
| Title |
|---|
| JOURNAL OF APPLIED PHYSICS=1975 * |
| SOLID-STATE SCIENCE AND TECHNOLOGY=1975 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02281290A (ja) * | 1989-03-31 | 1990-11-16 | Samsung Electron Devices Co Ltd | プラズマデイスプレーパネルのスキャンライン駆動分離回路及び分離方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0351295B2 (enrdf_load_stackoverflow) | 1991-08-06 |
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