JPH0339998B2 - - Google Patents
Info
- Publication number
- JPH0339998B2 JPH0339998B2 JP57124118A JP12411882A JPH0339998B2 JP H0339998 B2 JPH0339998 B2 JP H0339998B2 JP 57124118 A JP57124118 A JP 57124118A JP 12411882 A JP12411882 A JP 12411882A JP H0339998 B2 JPH0339998 B2 JP H0339998B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- oxygen
- oxygen concentration
- atoms
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12411882A JPS5918198A (ja) | 1982-07-16 | 1982-07-16 | デバイス基板用単結晶シリコン |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12411882A JPS5918198A (ja) | 1982-07-16 | 1982-07-16 | デバイス基板用単結晶シリコン |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5918198A JPS5918198A (ja) | 1984-01-30 |
JPH0339998B2 true JPH0339998B2 (enrdf_load_stackoverflow) | 1991-06-17 |
Family
ID=14877364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12411882A Granted JPS5918198A (ja) | 1982-07-16 | 1982-07-16 | デバイス基板用単結晶シリコン |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5918198A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3624827B2 (ja) * | 2000-12-20 | 2005-03-02 | 三菱住友シリコン株式会社 | シリコン単結晶の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4118303A (en) * | 1976-08-30 | 1978-10-03 | Burroughs Corporation | Apparatus for chemically treating a single side of a workpiece |
JPS5857724B2 (ja) * | 1979-07-24 | 1983-12-21 | 日本電信電話株式会社 | 光学的信号の接続装置 |
-
1982
- 1982-07-16 JP JP12411882A patent/JPS5918198A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5918198A (ja) | 1984-01-30 |
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