JPS5918198A - デバイス基板用単結晶シリコン - Google Patents

デバイス基板用単結晶シリコン

Info

Publication number
JPS5918198A
JPS5918198A JP12411882A JP12411882A JPS5918198A JP S5918198 A JPS5918198 A JP S5918198A JP 12411882 A JP12411882 A JP 12411882A JP 12411882 A JP12411882 A JP 12411882A JP S5918198 A JPS5918198 A JP S5918198A
Authority
JP
Japan
Prior art keywords
oxygen
single crystal
crystal silicon
device base
oxygen concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12411882A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0339998B2 (enrdf_load_stackoverflow
Inventor
Shozo Shirai
省三 白井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP12411882A priority Critical patent/JPS5918198A/ja
Publication of JPS5918198A publication Critical patent/JPS5918198A/ja
Publication of JPH0339998B2 publication Critical patent/JPH0339998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP12411882A 1982-07-16 1982-07-16 デバイス基板用単結晶シリコン Granted JPS5918198A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12411882A JPS5918198A (ja) 1982-07-16 1982-07-16 デバイス基板用単結晶シリコン

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12411882A JPS5918198A (ja) 1982-07-16 1982-07-16 デバイス基板用単結晶シリコン

Publications (2)

Publication Number Publication Date
JPS5918198A true JPS5918198A (ja) 1984-01-30
JPH0339998B2 JPH0339998B2 (enrdf_load_stackoverflow) 1991-06-17

Family

ID=14877364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12411882A Granted JPS5918198A (ja) 1982-07-16 1982-07-16 デバイス基板用単結晶シリコン

Country Status (1)

Country Link
JP (1) JPS5918198A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461893B1 (ko) * 2000-12-20 2004-12-16 미츠비시 스미토모 실리콘 주식회사 실리콘 웨이퍼 및 이것에 사용되는 실리콘 단결정의제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329677A (en) * 1976-08-30 1978-03-20 Burroughs Corp Method of and apparatus for chemically treating specimen only on one side thereof
JPS5617315A (en) * 1979-07-24 1981-02-19 Nippon Telegr & Teleph Corp <Ntt> Connector for optical signal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329677A (en) * 1976-08-30 1978-03-20 Burroughs Corp Method of and apparatus for chemically treating specimen only on one side thereof
JPS5617315A (en) * 1979-07-24 1981-02-19 Nippon Telegr & Teleph Corp <Ntt> Connector for optical signal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461893B1 (ko) * 2000-12-20 2004-12-16 미츠비시 스미토모 실리콘 주식회사 실리콘 웨이퍼 및 이것에 사용되는 실리콘 단결정의제조방법

Also Published As

Publication number Publication date
JPH0339998B2 (enrdf_load_stackoverflow) 1991-06-17

Similar Documents

Publication Publication Date Title
US4645546A (en) Semiconductor substrate
CN1217393C (zh) 热处理硅晶片的方法及用该方法制造的硅晶片
JPH11314997A (ja) 半導体シリコン単結晶ウェーハの製造方法
KR100625822B1 (ko) 실리콘 웨이퍼 및 그의 제조 방법
JPS60247935A (ja) 半導体ウエハの製造方法
JPS5918198A (ja) デバイス基板用単結晶シリコン
JP3080501B2 (ja) シリコンウェーハの製造方法
JPH1192283A (ja) シリコンウエハ及びその製造方法
JPH10144698A (ja) シリコンウエーハ及びその製造方法
JP3578396B2 (ja) 結晶格子欠陥を有する半導体ディスク及びその製造法
JPS62123098A (ja) シリコン単結晶の製造方法
CN100430531C (zh) 丘克拉斯基提拉器
JPS63142822A (ja) 半導体装置の製造方法
JPH0969526A (ja) 半導体装置の製造方法
JPH0247836A (ja) 半導体装置の製造方法
JPH01290229A (ja) 半導体ウエハ
JPH0319687B2 (enrdf_load_stackoverflow)
JPS6344720B2 (enrdf_load_stackoverflow)
JPH09199379A (ja) 高品位エピタキシャルウエハ及びその製造方法
JPS594128A (ja) 半導体装置の製造方法
JP2001044206A (ja) シリコンウェーハの熱処理方法
JPH0521303A (ja) 半導体基板及びその製造方法
JPS6115335A (ja) シリコンウエ−ハのゲツタリング方法
JPH06291123A (ja) 半導体装置の製造方法
KR0185985B1 (ko) 실리콘 웨이퍼의 에피택셜층 형성방법