JPS6248918B2 - - Google Patents
Info
- Publication number
- JPS6248918B2 JPS6248918B2 JP10968781A JP10968781A JPS6248918B2 JP S6248918 B2 JPS6248918 B2 JP S6248918B2 JP 10968781 A JP10968781 A JP 10968781A JP 10968781 A JP10968781 A JP 10968781A JP S6248918 B2 JPS6248918 B2 JP S6248918B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- active layer
- ingaasp
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000903 blocking effect Effects 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 description 7
- 238000005253 cladding Methods 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 125000005997 bromomethyl group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10968781A JPS5810883A (ja) | 1981-07-14 | 1981-07-14 | 埋め込みヘテロ構造半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10968781A JPS5810883A (ja) | 1981-07-14 | 1981-07-14 | 埋め込みヘテロ構造半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5810883A JPS5810883A (ja) | 1983-01-21 |
| JPS6248918B2 true JPS6248918B2 (enrdf_load_stackoverflow) | 1987-10-16 |
Family
ID=14516639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10968781A Granted JPS5810883A (ja) | 1981-07-14 | 1981-07-14 | 埋め込みヘテロ構造半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5810883A (enrdf_load_stackoverflow) |
-
1981
- 1981-07-14 JP JP10968781A patent/JPS5810883A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5810883A (ja) | 1983-01-21 |