JPS6248909B2 - - Google Patents

Info

Publication number
JPS6248909B2
JPS6248909B2 JP53164815A JP16481578A JPS6248909B2 JP S6248909 B2 JPS6248909 B2 JP S6248909B2 JP 53164815 A JP53164815 A JP 53164815A JP 16481578 A JP16481578 A JP 16481578A JP S6248909 B2 JPS6248909 B2 JP S6248909B2
Authority
JP
Japan
Prior art keywords
gate electrode
insulating film
gate insulating
floating gate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53164815A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5591876A (en
Inventor
Takashi Ito
Shinpei Tsucha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16481578A priority Critical patent/JPS5591876A/ja
Publication of JPS5591876A publication Critical patent/JPS5591876A/ja
Publication of JPS6248909B2 publication Critical patent/JPS6248909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP16481578A 1978-12-28 1978-12-28 Semiconductor memory device Granted JPS5591876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16481578A JPS5591876A (en) 1978-12-28 1978-12-28 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16481578A JPS5591876A (en) 1978-12-28 1978-12-28 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5591876A JPS5591876A (en) 1980-07-11
JPS6248909B2 true JPS6248909B2 (enrdf_load_stackoverflow) 1987-10-16

Family

ID=15800438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16481578A Granted JPS5591876A (en) 1978-12-28 1978-12-28 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5591876A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63175005U (enrdf_load_stackoverflow) * 1987-05-01 1988-11-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63175005U (enrdf_load_stackoverflow) * 1987-05-01 1988-11-14

Also Published As

Publication number Publication date
JPS5591876A (en) 1980-07-11

Similar Documents

Publication Publication Date Title
US4016588A (en) Non-volatile semiconductor memory device
US5572054A (en) Method of operating a single transistor non-volatile electrically alterable semiconductor memory device
US5029130A (en) Single transistor non-valatile electrically alterable semiconductor memory device
US4462090A (en) Method of operating a semiconductor memory circuit
US5242848A (en) Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device
US5045488A (en) Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device
TW200532901A (en) Nonvolatile semiconductor memory device
US6707082B2 (en) Ferroelectric transistor
KR20000017040A (ko) 반도체저장장치
US4717943A (en) Charge storage structure for nonvolatile memories
EP0579779B1 (en) A single transistor non-volatile electrically alterable semiconductor memory device
US8546862B2 (en) Memory cell, an array, and a method for manufacturing a memory cell
KR20010072087A (ko) 전기적 소거가능 비휘발성 메모리
JPH05235368A (ja) データ消去方法
US6903407B1 (en) Non volatile charge trapping dielectric memory cell structure with gate hole injection erase
JP4490630B2 (ja) 不揮発性メモリの消去方法
JP4969748B2 (ja) 不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法
JPH05251669A (ja) 半導体記憶装置およびその書き換え方法
US6724032B2 (en) Multi-bit non-volatile memory cell and method therefor
JPS6248909B2 (enrdf_load_stackoverflow)
US4672408A (en) Non-volatile semiconductor memory device
EP0166208B1 (en) Charge storage structure for nonvolatile memory
JP2002009255A (ja) 不揮発半導体記憶装置
JPH084114B2 (ja) 半導体不揮発性ram
JP2649511B2 (ja) 半導体記憶装置