JPS6248898B2 - - Google Patents
Info
- Publication number
- JPS6248898B2 JPS6248898B2 JP818381A JP818381A JPS6248898B2 JP S6248898 B2 JPS6248898 B2 JP S6248898B2 JP 818381 A JP818381 A JP 818381A JP 818381 A JP818381 A JP 818381A JP S6248898 B2 JPS6248898 B2 JP S6248898B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- metal film
- insulating film
- growth
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 8
- 230000010354 integration Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP818381A JPS57121253A (en) | 1981-01-21 | 1981-01-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP818381A JPS57121253A (en) | 1981-01-21 | 1981-01-21 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57121253A JPS57121253A (en) | 1982-07-28 |
| JPS6248898B2 true JPS6248898B2 (enrdf_load_stackoverflow) | 1987-10-16 |
Family
ID=11686184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP818381A Granted JPS57121253A (en) | 1981-01-21 | 1981-01-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57121253A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054455A (ja) * | 1983-09-05 | 1985-03-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH0612792B2 (ja) * | 1987-03-10 | 1994-02-16 | 日本電気株式会社 | 半導体装置の配線構造 |
-
1981
- 1981-01-21 JP JP818381A patent/JPS57121253A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57121253A (en) | 1982-07-28 |
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