JPS624869B2 - - Google Patents

Info

Publication number
JPS624869B2
JPS624869B2 JP56176340A JP17634081A JPS624869B2 JP S624869 B2 JPS624869 B2 JP S624869B2 JP 56176340 A JP56176340 A JP 56176340A JP 17634081 A JP17634081 A JP 17634081A JP S624869 B2 JPS624869 B2 JP S624869B2
Authority
JP
Japan
Prior art keywords
thin film
amorphous thin
pinhole
photosensitive insulator
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56176340A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5877263A (ja
Inventor
Kaneo Watanabe
Hidenori Nishiwaki
Keiichi Enomoto
Michitoshi Oonishi
Yukinori Kuwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56176340A priority Critical patent/JPS5877263A/ja
Publication of JPS5877263A publication Critical patent/JPS5877263A/ja
Publication of JPS624869B2 publication Critical patent/JPS624869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP56176340A 1981-11-02 1981-11-02 光起電力素子 Granted JPS5877263A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56176340A JPS5877263A (ja) 1981-11-02 1981-11-02 光起電力素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56176340A JPS5877263A (ja) 1981-11-02 1981-11-02 光起電力素子

Publications (2)

Publication Number Publication Date
JPS5877263A JPS5877263A (ja) 1983-05-10
JPS624869B2 true JPS624869B2 (enrdf_load_html_response) 1987-02-02

Family

ID=16011865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56176340A Granted JPS5877263A (ja) 1981-11-02 1981-11-02 光起電力素子

Country Status (1)

Country Link
JP (1) JPS5877263A (enrdf_load_html_response)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986270A (ja) * 1982-11-09 1984-05-18 Semiconductor Energy Lab Co Ltd 光電変換装置
JPH0616506B2 (ja) * 1984-12-26 1994-03-02 株式会社半導体エネルギー研究所 積層体の側周辺に選択的に被膜を形成する方法
DE3689679T2 (de) * 1985-08-24 1994-06-09 Semiconductor Energy Lab Herstellungsverfahren für ein Halbleiterbauelement frei von Leckstrom durch eine Halbleiterschict.
JPS6254478A (ja) * 1985-08-24 1987-03-10 Semiconductor Energy Lab Co Ltd 光電変換装置
AU583423B2 (en) * 1985-09-21 1989-04-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same
EP0236936A3 (de) * 1986-03-11 1989-03-29 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von elektrischen Bauelementen, vorzugsweise von aus amorphen Siliziumschichten bestehenden Solarzellen
JP3310370B2 (ja) * 1993-01-27 2002-08-05 株式会社半導体エネルギー研究所 アモルファス太陽電池およびその作製方法

Also Published As

Publication number Publication date
JPS5877263A (ja) 1983-05-10

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