JPS6246990B2 - - Google Patents

Info

Publication number
JPS6246990B2
JPS6246990B2 JP55079781A JP7978180A JPS6246990B2 JP S6246990 B2 JPS6246990 B2 JP S6246990B2 JP 55079781 A JP55079781 A JP 55079781A JP 7978180 A JP7978180 A JP 7978180A JP S6246990 B2 JPS6246990 B2 JP S6246990B2
Authority
JP
Japan
Prior art keywords
region
gate
type layer
type
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55079781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS575365A (en
Inventor
Hideji Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP7978180A priority Critical patent/JPS575365A/ja
Publication of JPS575365A publication Critical patent/JPS575365A/ja
Publication of JPS6246990B2 publication Critical patent/JPS6246990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Bipolar Transistors (AREA)
JP7978180A 1980-06-13 1980-06-13 Field effect semiconductor device Granted JPS575365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7978180A JPS575365A (en) 1980-06-13 1980-06-13 Field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7978180A JPS575365A (en) 1980-06-13 1980-06-13 Field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS575365A JPS575365A (en) 1982-01-12
JPS6246990B2 true JPS6246990B2 (enrdf_load_stackoverflow) 1987-10-06

Family

ID=13699740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7978180A Granted JPS575365A (en) 1980-06-13 1980-06-13 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS575365A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS575365A (en) 1982-01-12

Similar Documents

Publication Publication Date Title
US5320974A (en) Method for making semiconductor transistor device by implanting punch through stoppers
KR970004457B1 (ko) 반도체 장치 및 그 제조 방법
US5057884A (en) Semiconductor device having a structure which makes parasitic transistor hard to operate
US3946424A (en) High frequency field-effect transistors and method of making same
JPH0494576A (ja) 縦型パワーmos fet
JP2519284B2 (ja) 埋め込みゲ―ト型mosfetの製造方法
JPH05343686A (ja) 半導体装置およびその製造方法
JPS6152591B2 (enrdf_load_stackoverflow)
JPH03160761A (ja) 半導体装置
JP2001094099A (ja) 炭化珪素半導体装置及びその製造方法
JP3100663B2 (ja) 半導体装置及びその製造方法
JPS6246990B2 (enrdf_load_stackoverflow)
JPS6241428B2 (enrdf_load_stackoverflow)
JPS626352B2 (enrdf_load_stackoverflow)
US20050116298A1 (en) MOS field effect transistor with small miller capacitance
JPS6025028B2 (ja) 半導体装置の製造方法
JPS62248256A (ja) 半導体装置
JP3017838B2 (ja) 半導体装置およびその製造方法
JPH0786596A (ja) 半導体装置およびその製造方法
JP2540754B2 (ja) 高耐圧トランジスタ
JPH0812917B2 (ja) Misトランジスタの動作方法およびmisトランジスタ
JPS626670B2 (enrdf_load_stackoverflow)
JPH0521789A (ja) 電界効果型トランジスタ及びその製造方法
JP3300238B2 (ja) 半導体装置及びその製造方法
JPH07249760A (ja) 半導体装置の製造方法