JPS6245689B2 - - Google Patents

Info

Publication number
JPS6245689B2
JPS6245689B2 JP60173262A JP17326285A JPS6245689B2 JP S6245689 B2 JPS6245689 B2 JP S6245689B2 JP 60173262 A JP60173262 A JP 60173262A JP 17326285 A JP17326285 A JP 17326285A JP S6245689 B2 JPS6245689 B2 JP S6245689B2
Authority
JP
Japan
Prior art keywords
furnace
gas
vapor phase
upper chamber
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60173262A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61184819A (ja
Inventor
Takatoshi Nakanishi
Tokuji Tanaka
Takashi Udagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60173262A priority Critical patent/JPS61184819A/ja
Publication of JPS61184819A publication Critical patent/JPS61184819A/ja
Publication of JPS6245689B2 publication Critical patent/JPS6245689B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2911
    • H10P14/24
    • H10P14/3421

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP60173262A 1985-08-08 1985-08-08 気相成長方法 Granted JPS61184819A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60173262A JPS61184819A (ja) 1985-08-08 1985-08-08 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60173262A JPS61184819A (ja) 1985-08-08 1985-08-08 気相成長方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7504979A Division JPS55167041A (en) 1978-07-31 1979-06-14 Vertical type gaseous phase growth device

Publications (2)

Publication Number Publication Date
JPS61184819A JPS61184819A (ja) 1986-08-18
JPS6245689B2 true JPS6245689B2 (cg-RX-API-DMAC10.html) 1987-09-28

Family

ID=15957187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60173262A Granted JPS61184819A (ja) 1985-08-08 1985-08-08 気相成長方法

Country Status (1)

Country Link
JP (1) JPS61184819A (cg-RX-API-DMAC10.html)

Also Published As

Publication number Publication date
JPS61184819A (ja) 1986-08-18

Similar Documents

Publication Publication Date Title
US7699604B2 (en) Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device
KR100803445B1 (ko) 박막 균일성을 제어하기 위한 방법 및 그 방법으로 제조된제품
US4596208A (en) CVD reaction chamber
JP2505777B2 (ja) 半導体物質のエピタキシャル層堆積法
JP2668687B2 (ja) C v d 装 置
JPS6112880B2 (cg-RX-API-DMAC10.html)
KR940011099B1 (ko) 기상반응장치
KR101030422B1 (ko) 서셉터
JPH097953A (ja) 単結晶薄膜の製造方法
US3304908A (en) Epitaxial reactor including mask-work support
JPS6245689B2 (cg-RX-API-DMAC10.html)
JPS6245690B2 (cg-RX-API-DMAC10.html)
JPH0443878B2 (cg-RX-API-DMAC10.html)
JPS6343315A (ja) 減圧cvd装置
JP3084881B2 (ja) 有機金属気相成長装置
JPS6174328A (ja) 気相成長反応管
JP3637505B2 (ja) N型半導体薄膜の製造方法及び薄膜サーミスタの製造方法
JPH0343240B2 (cg-RX-API-DMAC10.html)
JPS603122A (ja) 気相成長装置
JPS61155292A (ja) 気相成長装置
JPS61101492A (ja) 気相成長反応管
JPS61242998A (ja) 炭化珪素単結晶半導体の製造方法
JPH02146725A (ja) 有機金属気相成長装置
JPS60132320A (ja) 気相成長反応管
JP2004273515A (ja) 半導体気相成長装置