JPS6245307B2 - - Google Patents

Info

Publication number
JPS6245307B2
JPS6245307B2 JP2926383A JP2926383A JPS6245307B2 JP S6245307 B2 JPS6245307 B2 JP S6245307B2 JP 2926383 A JP2926383 A JP 2926383A JP 2926383 A JP2926383 A JP 2926383A JP S6245307 B2 JPS6245307 B2 JP S6245307B2
Authority
JP
Japan
Prior art keywords
electrode
reaction tube
plasma
wafer
negative electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2926383A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59156426A (ja
Inventor
Junichi Suzuki
Kengi Suzuki
Riichi Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP2926383A priority Critical patent/JPS59156426A/ja
Publication of JPS59156426A publication Critical patent/JPS59156426A/ja
Publication of JPS6245307B2 publication Critical patent/JPS6245307B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP2926383A 1983-02-25 1983-02-25 プラズマ気相成長装置のプラズマ発生用電極 Granted JPS59156426A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2926383A JPS59156426A (ja) 1983-02-25 1983-02-25 プラズマ気相成長装置のプラズマ発生用電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2926383A JPS59156426A (ja) 1983-02-25 1983-02-25 プラズマ気相成長装置のプラズマ発生用電極

Publications (2)

Publication Number Publication Date
JPS59156426A JPS59156426A (ja) 1984-09-05
JPS6245307B2 true JPS6245307B2 (enrdf_load_stackoverflow) 1987-09-25

Family

ID=12271389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2926383A Granted JPS59156426A (ja) 1983-02-25 1983-02-25 プラズマ気相成長装置のプラズマ発生用電極

Country Status (1)

Country Link
JP (1) JPS59156426A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111109U (enrdf_load_stackoverflow) * 1988-01-20 1989-07-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111109U (enrdf_load_stackoverflow) * 1988-01-20 1989-07-26

Also Published As

Publication number Publication date
JPS59156426A (ja) 1984-09-05

Similar Documents

Publication Publication Date Title
KR101519036B1 (ko) 프로세스 챔버에 코팅하기 위한 장치 및 방법
KR0151233B1 (ko) 저누출 전류 및 고브레이크다운 전압을 갖는 실리콘 질화막의 형성 방법
JP7059351B2 (ja) 単結晶シリコンのエピタキシャル被覆半導体ウェハの製造方法
US6777354B2 (en) Semiconductor device and method of manufacturing the same
JPS6245307B2 (enrdf_load_stackoverflow)
US6150226A (en) Semiconductor processing methods, methods of forming capacitors, methods of forming silicon nitride, and methods of densifying silicon nitride layers
JPS63228626A (ja) 薄膜形成方法及び薄膜形成装置
JPS5941773B2 (ja) 気相成長方法及び装置
JPS6012728A (ja) 膜形成用電極構造体
JP3261514B2 (ja) 絶縁膜形成装置
US6815867B2 (en) Substrate usable for an acoustic surface wave device, a method for fabricating the same substrate and an acoustic surface wave device having the same substrate
JP3060468B2 (ja) 半導体装置の製造方法
JPS6052578A (ja) 窒化シリコン膜の形成方法
JP2000340561A (ja) 成膜方法
US20240420934A1 (en) In-situ etch and inhibition in plasma enhanced atomic layer deposition
JPH0641400B2 (ja) 炭化珪素単結晶の製造方法
JPH07161646A (ja) 多結晶膜作成方法
JP3072664B2 (ja) 縦型減圧気相成長装置
TW202503095A (zh) 嵌套循環電漿增進原子層沉積
JP2521953B2 (ja) 半導体化炭素薄膜の製造方法
JP2521952B2 (ja) 半導体化炭素薄膜の製造方法
JPH0527502Y2 (enrdf_load_stackoverflow)
JPH1027758A (ja) 気相成長装置及び半導体ウエハの気相成長方法
JPH01186627A (ja) 半導体素子のパシベーション膜作成方法
JPS63299363A (ja) リンをド−プしたポリシリコン膜の形成方法