JPS6244837B2 - - Google Patents
Info
- Publication number
- JPS6244837B2 JPS6244837B2 JP56004495A JP449581A JPS6244837B2 JP S6244837 B2 JPS6244837 B2 JP S6244837B2 JP 56004495 A JP56004495 A JP 56004495A JP 449581 A JP449581 A JP 449581A JP S6244837 B2 JPS6244837 B2 JP S6244837B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- electrode
- gap
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H10W72/019—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H10W72/536—
-
- H10W72/5363—
-
- H10W72/59—
-
- H10W72/884—
-
- H10W72/934—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP449581A JPS57117284A (en) | 1981-01-13 | 1981-01-13 | 3-5 group compound semiconductor device |
| NLAANVRAGE8200038,A NL186354C (nl) | 1981-01-13 | 1982-01-07 | Halfgeleiderinrichting die uit iii-v verbindingen bestaat, met een samengestelde elektrode. |
| DE19823200788 DE3200788A1 (de) | 1981-01-13 | 1982-01-13 | Elektrode fuer halbleiterbauteile |
| US06/681,710 US4553154A (en) | 1981-01-13 | 1984-12-13 | Light emitting diode electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP449581A JPS57117284A (en) | 1981-01-13 | 1981-01-13 | 3-5 group compound semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57117284A JPS57117284A (en) | 1982-07-21 |
| JPS6244837B2 true JPS6244837B2 (enExample) | 1987-09-22 |
Family
ID=11585648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP449581A Granted JPS57117284A (en) | 1981-01-13 | 1981-01-13 | 3-5 group compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57117284A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04109674A (ja) * | 1990-08-29 | 1992-04-10 | Victor Co Of Japan Ltd | 化合物半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6034827B2 (ja) * | 1977-06-28 | 1985-08-10 | 株式会社東芝 | リン化ガリウム発光素子 |
| JPS5575270A (en) * | 1978-12-02 | 1980-06-06 | Semiconductor Res Found | Static induction transistor |
| JPS5575276A (en) * | 1978-12-02 | 1980-06-06 | Sharp Corp | 3[5 group compound semiconductor device |
-
1981
- 1981-01-13 JP JP449581A patent/JPS57117284A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57117284A (en) | 1982-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5877558A (en) | Gallium nitride-based III-V group compound semiconductor | |
| CN100397670C (zh) | 氮化镓系ⅲ-ⅴ族化合物半导体器件 | |
| US7666692B2 (en) | Semiconductor device, its manufacture method and electronic component unit | |
| JP3271475B2 (ja) | 電気素子の接合材料および接合方法 | |
| CN100459182C (zh) | 发光元件 | |
| KR20030094073A (ko) | Ⅲ족 질화물계 화합물 반도체 발광 소자 | |
| US4553154A (en) | Light emitting diode electrode | |
| KR20080015794A (ko) | InGaAlN 발광 장치 및 이의 제조 방법 | |
| JPS6159886A (ja) | 光半導体装置の製造方法 | |
| US6653215B1 (en) | Contact to n-GaN with Au termination | |
| JP3239350B2 (ja) | n型窒化物半導体層の電極 | |
| JPS6244836B2 (enExample) | ||
| JPS6244837B2 (enExample) | ||
| JP4594708B2 (ja) | 発光ダイオードおよびその製造方法、発光ダイオードランプ。 | |
| JPS6148776B2 (enExample) | ||
| JPH11204828A (ja) | 発光ダイオードの製造方法 | |
| JP2003142731A (ja) | 発光ダイオード素子及び発光ダイオード装置 | |
| JPH0423821B2 (enExample) | ||
| JP2007317913A (ja) | 半導体発光素子およびその製造方法 | |
| JPS6133277B2 (enExample) | ||
| JPH0463480A (ja) | 3―v族化合物半導体装置 | |
| JPH0697423A (ja) | Ii−vi族化合物半導体用電極 | |
| JPS6014445A (ja) | 化合物半導体装置 | |
| JPS6133278B2 (enExample) | ||
| JPS6059753B2 (ja) | 化合物半導体装置の製造方法 |