JPS6244826B2 - - Google Patents

Info

Publication number
JPS6244826B2
JPS6244826B2 JP56085248A JP8524881A JPS6244826B2 JP S6244826 B2 JPS6244826 B2 JP S6244826B2 JP 56085248 A JP56085248 A JP 56085248A JP 8524881 A JP8524881 A JP 8524881A JP S6244826 B2 JPS6244826 B2 JP S6244826B2
Authority
JP
Japan
Prior art keywords
metal
schottky
silicide
film
platinum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56085248A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57199274A (en
Inventor
Masaaki Kimata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56085248A priority Critical patent/JPS57199274A/ja
Publication of JPS57199274A publication Critical patent/JPS57199274A/ja
Publication of JPS6244826B2 publication Critical patent/JPS6244826B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Light Receiving Elements (AREA)
JP56085248A 1981-06-01 1981-06-01 Schottky type light detecting element Granted JPS57199274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56085248A JPS57199274A (en) 1981-06-01 1981-06-01 Schottky type light detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56085248A JPS57199274A (en) 1981-06-01 1981-06-01 Schottky type light detecting element

Publications (2)

Publication Number Publication Date
JPS57199274A JPS57199274A (en) 1982-12-07
JPS6244826B2 true JPS6244826B2 (enExample) 1987-09-22

Family

ID=13853262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56085248A Granted JPS57199274A (en) 1981-06-01 1981-06-01 Schottky type light detecting element

Country Status (1)

Country Link
JP (1) JPS57199274A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4876586A (en) * 1987-12-21 1989-10-24 Sangamo-Weston, Incorporated Grooved Schottky barrier photodiode for infrared sensing
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS=1971 *
O.S.HEAVENS OPTICAL PROPERTIES OF THIN SOLID FILMS=1955 *

Also Published As

Publication number Publication date
JPS57199274A (en) 1982-12-07

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