JPS623996B2 - - Google Patents

Info

Publication number
JPS623996B2
JPS623996B2 JP55172918A JP17291880A JPS623996B2 JP S623996 B2 JPS623996 B2 JP S623996B2 JP 55172918 A JP55172918 A JP 55172918A JP 17291880 A JP17291880 A JP 17291880A JP S623996 B2 JPS623996 B2 JP S623996B2
Authority
JP
Japan
Prior art keywords
erase
gate
insulating film
memory cell
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55172918A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5798193A (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP17291880A priority Critical patent/JPS5798193A/ja
Priority to EP81305347A priority patent/EP0053878B1/en
Priority to DE8181305347T priority patent/DE3171836D1/de
Priority to US06/320,935 priority patent/US4466081A/en
Publication of JPS5798193A publication Critical patent/JPS5798193A/ja
Publication of JPS623996B2 publication Critical patent/JPS623996B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP17291880A 1980-12-08 1980-12-08 Semiconductor storage device Granted JPS5798193A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP17291880A JPS5798193A (en) 1980-12-08 1980-12-08 Semiconductor storage device
EP81305347A EP0053878B1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
DE8181305347T DE3171836D1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
US06/320,935 US4466081A (en) 1980-12-08 1981-11-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17291880A JPS5798193A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5798193A JPS5798193A (en) 1982-06-18
JPS623996B2 true JPS623996B2 (en, 2012) 1987-01-28

Family

ID=15950759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17291880A Granted JPS5798193A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5798193A (en, 2012)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435756B2 (en, 2012) * 1974-02-04 1979-11-05
JPS5513901A (en) * 1978-07-17 1980-01-31 Hitachi Ltd Fixed memory of semiconductor

Also Published As

Publication number Publication date
JPS5798193A (en) 1982-06-18

Similar Documents

Publication Publication Date Title
JPS6034199B2 (ja) 半導体記憶装置
EP0053878B1 (en) Semiconductor memory device
US4803529A (en) Electrically erasable and electrically programmable read only memory
JP3167919B2 (ja) Ｎａｎｄ構造の不揮発性半導体メモリとそのプログラム方法
US4612212A (en) Method for manufacturing E2 PROM
EP0054355B1 (en) Semiconductor memory device
KR960016106B1 (ko) 비 휘발성 반도체 메모리 장치
JPH10510124A (ja) ２トランジスタ無消費電力型の電気的書き換え可能な不揮発性ラッチ素子
US4437174A (en) Semiconductor memory device
JP2004031920A (ja) 不揮発性半導体記憶装置
JP4557950B2 (ja) 不揮発性半導体記憶置
US5576993A (en) Flash memory array with self-limiting erase
JP2724150B2 (ja) 不揮発性半導体メモリ装置
JPS623994B2 (en, 2012)
JPS6331113B2 (en, 2012)
JPS6152555B2 (en, 2012)
JPS6331114B2 (en, 2012)
JPS623996B2 (en, 2012)
JPS623992B2 (en, 2012)
JPS623993B2 (en, 2012)
JPH0150116B2 (en, 2012)
JPS6226596B2 (en, 2012)
JPS6130351B2 (en, 2012)
JPS5819796A (ja) 半導体記憶装置
JPS6331112B2 (en, 2012)