JPS623994B2 - - Google Patents

Info

Publication number
JPS623994B2
JPS623994B2 JP55172916A JP17291680A JPS623994B2 JP S623994 B2 JPS623994 B2 JP S623994B2 JP 55172916 A JP55172916 A JP 55172916A JP 17291680 A JP17291680 A JP 17291680A JP S623994 B2 JPS623994 B2 JP S623994B2
Authority
JP
Japan
Prior art keywords
erase
gate
insulating film
data
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55172916A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5798191A (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP17291680A priority Critical patent/JPS5798191A/ja
Priority to EP81305348A priority patent/EP0054355B1/en
Priority to DE8181305348T priority patent/DE3174417D1/de
Priority to US06/321,320 priority patent/US4437172A/en
Publication of JPS5798191A publication Critical patent/JPS5798191A/ja
Publication of JPS623994B2 publication Critical patent/JPS623994B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP17291680A 1980-12-08 1980-12-08 Semiconductor storage device Granted JPS5798191A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP17291680A JPS5798191A (en) 1980-12-08 1980-12-08 Semiconductor storage device
EP81305348A EP0054355B1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
DE8181305348T DE3174417D1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
US06/321,320 US4437172A (en) 1980-12-08 1981-11-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17291680A JPS5798191A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5798191A JPS5798191A (en) 1982-06-18
JPS623994B2 true JPS623994B2 (en, 2012) 1987-01-28

Family

ID=15950720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17291680A Granted JPS5798191A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5798191A (en, 2012)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH073693B2 (ja) * 1986-05-20 1995-01-18 日本電信電話株式会社 光ビ−ムのアクセス制御装置
US5313420A (en) 1987-04-24 1994-05-17 Kabushiki Kaisha Toshiba Programmable semiconductor memory
US5245566A (en) * 1987-04-24 1993-09-14 Fujio Masuoka Programmable semiconductor
US5719805A (en) * 1987-04-24 1998-02-17 Kabushiki Kaisha Toshiba Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units
JPH0191395A (ja) * 1987-10-01 1989-04-11 Toshiba Corp 不揮発性半導体メモリ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633797B2 (en, 2012) * 1973-05-18 1981-08-06
JPS5513901A (en) * 1978-07-17 1980-01-31 Hitachi Ltd Fixed memory of semiconductor

Also Published As

Publication number Publication date
JPS5798191A (en) 1982-06-18

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