JPS623988B2 - - Google Patents

Info

Publication number
JPS623988B2
JPS623988B2 JP55061678A JP6167880A JPS623988B2 JP S623988 B2 JPS623988 B2 JP S623988B2 JP 55061678 A JP55061678 A JP 55061678A JP 6167880 A JP6167880 A JP 6167880A JP S623988 B2 JPS623988 B2 JP S623988B2
Authority
JP
Japan
Prior art keywords
layer
terminal
semiconductor
channel layer
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55061678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56158480A (en
Inventor
Yasuhisa Oomura
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6167880A priority Critical patent/JPS56158480A/ja
Publication of JPS56158480A publication Critical patent/JPS56158480A/ja
Publication of JPS623988B2 publication Critical patent/JPS623988B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP6167880A 1980-05-12 1980-05-12 Field effect transistor Granted JPS56158480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6167880A JPS56158480A (en) 1980-05-12 1980-05-12 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6167880A JPS56158480A (en) 1980-05-12 1980-05-12 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS56158480A JPS56158480A (en) 1981-12-07
JPS623988B2 true JPS623988B2 (enrdf_load_stackoverflow) 1987-01-28

Family

ID=13178148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6167880A Granted JPS56158480A (en) 1980-05-12 1980-05-12 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS56158480A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200094780A (ko) 2018-02-06 2020-08-07 아오이 전자 주식회사 반도체 장치의 제조 방법
US11398376B2 (en) 2020-03-03 2022-07-26 Kioxia Corporation Manufacturing method of a semiconductor device including a support

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128731A (en) * 1990-06-13 1992-07-07 Integrated Device Technology, Inc. Static random access memory cell using a P/N-MOS transistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200094780A (ko) 2018-02-06 2020-08-07 아오이 전자 주식회사 반도체 장치의 제조 방법
US11521948B2 (en) 2018-02-06 2022-12-06 Aoi Electronics Co., Ltd. Method of manufacturing semiconductor device
US11398376B2 (en) 2020-03-03 2022-07-26 Kioxia Corporation Manufacturing method of a semiconductor device including a support

Also Published As

Publication number Publication date
JPS56158480A (en) 1981-12-07

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