JPS6239532B2 - - Google Patents
Info
- Publication number
- JPS6239532B2 JPS6239532B2 JP54149726A JP14972679A JPS6239532B2 JP S6239532 B2 JPS6239532 B2 JP S6239532B2 JP 54149726 A JP54149726 A JP 54149726A JP 14972679 A JP14972679 A JP 14972679A JP S6239532 B2 JPS6239532 B2 JP S6239532B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- electrodes
- support
- uniform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 description 37
- 238000000151 deposition Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14972679A JPS5671930A (en) | 1979-11-19 | 1979-11-19 | Film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14972679A JPS5671930A (en) | 1979-11-19 | 1979-11-19 | Film formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5671930A JPS5671930A (en) | 1981-06-15 |
| JPS6239532B2 true JPS6239532B2 (OSRAM) | 1987-08-24 |
Family
ID=15481461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14972679A Granted JPS5671930A (en) | 1979-11-19 | 1979-11-19 | Film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5671930A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0382403A (ja) * | 1989-08-28 | 1991-04-08 | Matsushita Electric Works Ltd | 昇降テーブル |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150874A (en) * | 1980-04-23 | 1981-11-21 | Teijin Ltd | Method of continuously manufacturing amorphous silicon solar battery |
| JPS6059728A (ja) * | 1983-09-12 | 1985-04-06 | Sanyo Electric Co Ltd | 半導体膜の製造方法 |
| FR2550007A1 (en) * | 1983-07-29 | 1985-02-01 | Sanyo Electric Co | Method for producing a semiconducting film and photovoltaic device obtained by the method |
| JPS6059729A (ja) * | 1983-09-12 | 1985-04-06 | Sanyo Electric Co Ltd | 半導体膜の製造方法 |
| JPH0763057B2 (ja) * | 1984-11-12 | 1995-07-05 | 鐘淵化学工業株式会社 | 多電極薄膜形成方法 |
-
1979
- 1979-11-19 JP JP14972679A patent/JPS5671930A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0382403A (ja) * | 1989-08-28 | 1991-04-08 | Matsushita Electric Works Ltd | 昇降テーブル |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5671930A (en) | 1981-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6638839B2 (en) | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets | |
| AU2003271089B2 (en) | Method for forming thin film and apparatus therefor | |
| JPS63187619A (ja) | プラズマｃｖｄ装置 | |
| US4987005A (en) | Chemical vapor processing method for deposition or etching on a plurality of substrates | |
| JPH07105354B2 (ja) | プラズマ・チャンバー内で、無定形水素化シリコンを基板へ付着させる方法 | |
| US4462333A (en) | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus | |
| JP5089669B2 (ja) | 薄膜形成装置 | |
| JPH09256162A (ja) | マイクロ波プラズマｃｖｄ法を用いた膜堆積方法および膜堆積装置 | |
| JPH07230960A (ja) | プラズマｃｖｄ装置 | |
| JPS6239532B2 (OSRAM) | ||
| US6470823B2 (en) | Apparatus and method for forming a deposited film by a means of plasma CVD | |
| JPS62203328A (ja) | プラズマｃｖｄ装置 | |
| JP4273382B2 (ja) | プラズマ処理装置と薄膜形成方法 | |
| JP3144165B2 (ja) | 薄膜生成装置 | |
| EP0674335B1 (en) | Plasma processing method and plasma processing apparatus | |
| JPS63940B2 (OSRAM) | ||
| JPH0590939U (ja) | プラズマｃｖｄ装置 | |
| JPH0244141B2 (OSRAM) | ||
| JPS62130277A (ja) | アモルフアスシリコン薄膜製造方法および装置 | |
| JPH0622203B2 (ja) | アモルフアス半導体薄膜生成装置 | |
| JPS62262419A (ja) | プラズマｃｖｄ装置 | |
| JPS60431B2 (ja) | 膜形成法 | |
| JPS6257710B2 (OSRAM) | ||
| JPH0152052B2 (OSRAM) | ||
| JP4386493B2 (ja) | プラズマｃｖｄ装置及び膜形成方法 |