JPS6238870B2 - - Google Patents
Info
- Publication number
- JPS6238870B2 JPS6238870B2 JP93077A JP93077A JPS6238870B2 JP S6238870 B2 JPS6238870 B2 JP S6238870B2 JP 93077 A JP93077 A JP 93077A JP 93077 A JP93077 A JP 93077A JP S6238870 B2 JPS6238870 B2 JP S6238870B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- region
- type semiconductor
- semiconductor layer
- type conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims 2
- 229910021426 porous silicon Inorganic materials 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP93077A JPS5386184A (en) | 1977-01-07 | 1977-01-07 | Semiconductor device and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP93077A JPS5386184A (en) | 1977-01-07 | 1977-01-07 | Semiconductor device and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5386184A JPS5386184A (en) | 1978-07-29 |
| JPS6238870B2 true JPS6238870B2 (de) | 1987-08-20 |
Family
ID=11487394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP93077A Granted JPS5386184A (en) | 1977-01-07 | 1977-01-07 | Semiconductor device and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5386184A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5743468A (en) * | 1981-06-29 | 1982-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
-
1977
- 1977-01-07 JP JP93077A patent/JPS5386184A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5386184A (en) | 1978-07-29 |
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