JPS6238850B2 - - Google Patents
Info
- Publication number
- JPS6238850B2 JPS6238850B2 JP9524078A JP9524078A JPS6238850B2 JP S6238850 B2 JPS6238850 B2 JP S6238850B2 JP 9524078 A JP9524078 A JP 9524078A JP 9524078 A JP9524078 A JP 9524078A JP S6238850 B2 JPS6238850 B2 JP S6238850B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- type
- gaas
- diffusion
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 229910007567 Zn-Ni Inorganic materials 0.000 description 11
- 229910007614 Zn—Ni Inorganic materials 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 9
- 239000011701 zinc Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000008188 pellet Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910018137 Al-Zn Inorganic materials 0.000 description 1
- 229910018573 Al—Zn Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9524078A JPS5521186A (en) | 1978-08-03 | 1978-08-03 | Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9524078A JPS5521186A (en) | 1978-08-03 | 1978-08-03 | Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5521186A JPS5521186A (en) | 1980-02-15 |
| JPS6238850B2 true JPS6238850B2 (enrdf_load_stackoverflow) | 1987-08-20 |
Family
ID=14132225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9524078A Granted JPS5521186A (en) | 1978-08-03 | 1978-08-03 | Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5521186A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01307219A (ja) * | 1988-06-03 | 1989-12-12 | Matsushita Electron Corp | 半導体装置の電極形成方法 |
-
1978
- 1978-08-03 JP JP9524078A patent/JPS5521186A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5521186A (en) | 1980-02-15 |
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