JPS6237779B2 - - Google Patents

Info

Publication number
JPS6237779B2
JPS6237779B2 JP11315480A JP11315480A JPS6237779B2 JP S6237779 B2 JPS6237779 B2 JP S6237779B2 JP 11315480 A JP11315480 A JP 11315480A JP 11315480 A JP11315480 A JP 11315480A JP S6237779 B2 JPS6237779 B2 JP S6237779B2
Authority
JP
Japan
Prior art keywords
film
mask
pinhole
dye
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11315480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5737831A (en
Inventor
Fumio Hori
Akira Morishige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11315480A priority Critical patent/JPS5737831A/ja
Publication of JPS5737831A publication Critical patent/JPS5737831A/ja
Publication of JPS6237779B2 publication Critical patent/JPS6237779B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP11315480A 1980-08-18 1980-08-18 Mask correcting method Granted JPS5737831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11315480A JPS5737831A (en) 1980-08-18 1980-08-18 Mask correcting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11315480A JPS5737831A (en) 1980-08-18 1980-08-18 Mask correcting method

Publications (2)

Publication Number Publication Date
JPS5737831A JPS5737831A (en) 1982-03-02
JPS6237779B2 true JPS6237779B2 (enrdf_load_stackoverflow) 1987-08-14

Family

ID=14604927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11315480A Granted JPS5737831A (en) 1980-08-18 1980-08-18 Mask correcting method

Country Status (1)

Country Link
JP (1) JPS5737831A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2702409B2 (ja) * 1994-07-18 1998-01-21 東芝イーエムアイ株式会社 ディスク収納用ケース

Also Published As

Publication number Publication date
JPS5737831A (en) 1982-03-02

Similar Documents

Publication Publication Date Title
US4218532A (en) Photolithographic technique for depositing thin films
US3982943A (en) Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
US4533624A (en) Method of forming a low temperature multilayer photoresist lift-off pattern
US4174219A (en) Method of making a negative exposure mask
US4004044A (en) Method for forming patterned films utilizing a transparent lift-off mask
US4202914A (en) Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
US4451554A (en) Method of forming thin-film pattern
JPS6347257B2 (enrdf_load_stackoverflow)
JPS6237779B2 (enrdf_load_stackoverflow)
JP2003121989A (ja) ハーフトーン型位相シフトマスクの修正方法
JP2009063649A (ja) 薬液及びそれを用いた基板処理方法
JPH05217834A (ja) マスク上のｌｓｉチップレイアウト方法
JPH11204414A (ja) パターン形成法
JPS5829619B2 (ja) シヤシンシヨツコクヨウホトマスク
JPH01283887A (ja) 酸化物超伝導体用パターン形成方法
JP3421268B2 (ja) パターン形成法
JPH02156244A (ja) パターン形成方法
JPS5950053B2 (ja) 写真蝕刻方法
JPS6140102B2 (enrdf_load_stackoverflow)
JPH10104813A (ja) 位相シフトマスク
JPS59127862A (ja) カラ−固体撮像素子の製造方法
JPS62165651A (ja) レジストパタ−ンの形成方法
JPS646448B2 (enrdf_load_stackoverflow)
JPH0338644A (ja) フォトマスク及びその製造方法
JPH07283239A (ja) 半導体装置の製造方法